ON Semiconductor Unveils 650V SiC MOSFET Product Family
Compliant with 'AEC-Q101', the automotive reliability standard
Adoption of a thin wafer-based active cell design method


ON Semiconductor unveiled a new family of 650V silicon carbide (SiC) MOSFETs on the 18th. These new products, which replace existing silicon (Si) products, are suitable for applications such as electric vehicle onboard chargers (OBCs), server power supplies (PSUs), uninterruptible power supplies (UPSs), solar inverters, and telecommunications.

Compliant with AEC-Q101, the automotive reliability standard, the new product family is based on wide bandgap (WBG) materials that provide better switching performance and thermal characteristics than silicon, enabling increased system-level efficiency, improved power density, lower electromagnetic interference (EMI), and reduced overall system size and weight.

The new product line adopts an active cell design based on advanced thin wafer technology that achieves high area resistance (RDS(on) × area = Rsp) at 650 V breakdown voltage. The RDS(on) of the NTBG015N065SC1, NVBG015N065SC1, NTH4L015N065SC1, and NVH4L015N065SC1 products, which are available in D2PAK-7L and TO247-4L packages respectively, is only 12 milliohms (mΩ).

The use of an internal gate resistor (Rg) eliminates the need for external gate resistors to artificially slow down the product, providing greater design flexibility. Furthermore, it enhances durability and reliability by withstanding high surge and avalanche loads while providing short-circuit robustness, extending application life.