Samsung Electronics Develops 512GB DDR5 Memory Module
HKMG process, first application of 8-layer TSV technology in DRAM
Intel to Unveil DDR5-Supported Xeon Processors in Second Half


DDR5, the next-generation DRAM standard, offers double the performance of DDR4. With data transfer speeds reaching 7,200 Mbps, it can process two 30 GB UHD movies per second.

On the 25th, Samsung Electronics developed the industry's largest capacity 512GB DDR5 memory module using the 'High-K Metal Gate (HKMG)' process.

The DDR5 memory developed by Samsung Electronics achieves both high performance and low power consumption by applying a material with a high dielectric constant (K) to the process to prevent leakage current caused by process miniaturization. DDR5 memory modules utilizing HKMG are expected to be suitable for environments where power efficiency is critical, such as data centers, as power consumption is reduced by approximately 13% compared to existing processes.

In addition, this product incorporates 8-stage Through Silicon Via (TSV) technology. Samsung Electronics has applied 16Gb (gigabit) based 8-layer TSV technology to this DDR5 512GB module in response to the expansion of the high-capacity memory market and the spread of data-based applications.

Meanwhile, Carolyn Duran, Intel’s Executive Vice President of Memory and IO Technology, stated, “We are currently collaborating with Samsung Electronics to develop the ‘Sapphire Rapids Intel® Xeon® Scalable’ processor, which is compatible with DDR5 memory.” The Sapphire Rapids processor is scheduled for release in the second half of this year.

A Samsung Electronics official stated that the company plans to commercialize high-capacity DDR5 memory using the HKMG process and 8-layer TSV technology when appropriate, depending on customer demand in the next-generation computing market.