The government is accelerating the development of three new semiconductor materials that offer superior power efficiency and durability compared to silicon.

On April 1, the government held the 7th Innovation Growth BIG3 Promotion Meeting and announced the "Next-Generation Power Semiconductor Technology Development and Production Capacity Expansion Plan" to intensively foster next-generation power semiconductors.

'Next-generation power semiconductors' are power semiconductors manufactured with wafers made of three new materials: silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga2O3), which have superior power efficiency and durability compared to silicon (Si). They are semiconductors with high future growth potential due to the expansion of demand for electronic devices and the increase in power consumption.

The government will first support demand linkage and prototype production to develop commercial products.

We plan R&D projects that link components, modules, and systems, focusing on areas that can be commercialized in the short term, to promote commercialization, and expand commercialization results by utilizing online platforms that link supply and demand and convergence alliances.

In addition, the only 6-inch SiC semiconductor in KoreaWe plan to provide prototype manufacturing services by utilizing the 'Power Semiconductor Commercialization Center', which is a conductor prototype manufacturing base, and actively support infrastructure investment by private foundries.

Next, we will strengthen basic technologies such as new material application and semiconductor design and verification.

To overcome the limitations of silicon materials, we will develop application technologies for new materials based on compounds such as SiC, GaN, and Ga2O3, and support domestic companies in securing material and wafer technologies to strengthen the value chain.

In addition, the company plans to support the development of power IC design technology for the development of highly integrated, high-performance next-generation power semiconductors and develop a process standard design kit (PDK) to link design and manufacturing, thereby strengthening semiconductor manufacturing capabilities.

We will optimize and advance the next-generation power semiconductor manufacturing process, which is still in its infancy, to secure the technological capabilities for prototyping through mass production, and establish equipment to support reliability evaluation at the Busan Power Semiconductor Commercialization Center.

In addition, to expand foundry services related to next-generation power semiconductors, we plan to actively discuss and support the establishment of mass production processes based on 6-8 inches and the acquisition of advanced technologies with domestic foundries.

Minister of Trade, Industry and Energy Sung Yun-mo said, “In order to implement new technologies such as AI and 5G and to revitalize future growth areas such as autonomous vehicles and renewable energy, efficient management of electricity is essential, and next-generation power semiconductors are key components for this.” He added, “The government plans to actively support R&D and infrastructure to secure future competitiveness and take the lead in the still-nascent next-generation power semiconductor market. We will also build a robust industrial ecosystem based on joint efforts between the public and private sectors and solidarity and cooperation across the value chain.”