This page was machine-translated and may differ from the original. View original
STMicroelectronics Launches MasterGaN4 Device, Supporting 200W Power Conversion
STMicroelectronics Launches Device to Simplify Power Semiconductor Design
Utilizing GaN material, high operating frequency and reduced heat dissipation
Suitable for application power designs up to 200W
STMicroelectronics today introduced a new MasterGaN4 device that simplifies the design of power-conversion applications up to 200 W. The power package integrates two symmetrical 650 V gallium nitride (GaN) power transistors with 225 mΩ RDS(on) along with optimized gate drivers and circuit protection.

MasterGaN4 simplifies wide-bandgap GaN power semiconductor design by eliminating complex gate control and circuit layout challenges. It provides an input voltage tolerance of 3.3 to 15 V, allowing direct package connection to control Hall-Effect sensors or CMOS devices such as MCUs, DSPs, and FPGAs.
By leveraging the superior switching characteristics of GaN transistors, which enable higher operating frequencies and improved efficiency that reduces heat dissipation, designers can implement smaller and lighter power supplies, chargers, and adapters using smaller magnetic components and heat sinks.
MasterGaN4 is suitable for symmetrical half-bridge topologies as well as soft-switching topologies such as active-clamp flyback and active-clamp forward. Its supply voltage range of 4.75 to 9.5 V allows for easy integration into existing power rails. Integrated protection features, including gate driver interlock, high- and low-side undervoltage lockout (UVLO), and overtemperature protection, further simplify design. A dedicated shutdown pin is also provided.
The accompanying prototype board, the "EVALMASTERGAN4," provides a full feature set for driving the MasterGaN4 with a single or complementary drive signal, along with an adjustable deadtime generator. Users can apply separate input and PWM signals to the board, insert an external bootstrap diode, separate the logic and gate driver power rails, and use a low-side shunt resistor for peak current-mode topologies.
MasterGaN4 is currently in production in a 9 × 9 × 1 mm GQFN package with a creepage distance greater than 2 mm for safe use in high-voltage applications. Pricing starts at $5.99 for orders of 1,000 units. The EVALMASTERGAN4 board costs $87.
Utilizing GaN material, high operating frequency and reduced heat dissipation
Suitable for application power designs up to 200W
STMicroelectronics today introduced a new MasterGaN4 device that simplifies the design of power-conversion applications up to 200 W. The power package integrates two symmetrical 650 V gallium nitride (GaN) power transistors with 225 mΩ RDS(on) along with optimized gate drivers and circuit protection.

▲ ST Launches MasterGaN4 Device [Image = ST]
MasterGaN4 simplifies wide-bandgap GaN power semiconductor design by eliminating complex gate control and circuit layout challenges. It provides an input voltage tolerance of 3.3 to 15 V, allowing direct package connection to control Hall-Effect sensors or CMOS devices such as MCUs, DSPs, and FPGAs.
By leveraging the superior switching characteristics of GaN transistors, which enable higher operating frequencies and improved efficiency that reduces heat dissipation, designers can implement smaller and lighter power supplies, chargers, and adapters using smaller magnetic components and heat sinks.
MasterGaN4 is suitable for symmetrical half-bridge topologies as well as soft-switching topologies such as active-clamp flyback and active-clamp forward. Its supply voltage range of 4.75 to 9.5 V allows for easy integration into existing power rails. Integrated protection features, including gate driver interlock, high- and low-side undervoltage lockout (UVLO), and overtemperature protection, further simplify design. A dedicated shutdown pin is also provided.
The accompanying prototype board, the "EVALMASTERGAN4," provides a full feature set for driving the MasterGaN4 with a single or complementary drive signal, along with an adjustable deadtime generator. Users can apply separate input and PWM signals to the board, insert an external bootstrap diode, separate the logic and gate driver power rails, and use a low-side shunt resistor for peak current-mode topologies.
MasterGaN4 is currently in production in a 9 × 9 × 1 mm GQFN package with a creepage distance greater than 2 mm for safe use in high-voltage applications. Pricing starts at $5.99 for orders of 1,000 units. The EVALMASTERGAN4 board costs $87.
본 기사에 대한 정정·반론·추후보도 청구는 보도 청구 안내를, 그간 게재된 보도문은 정정·반론보도 모아보기를 참고해 주세요.














