Radar requires high-power power devices
GaN material attracts attention as a material suitable for power devices.
ETRI and RFHIC Join Forces to Develop GaN MMIC Process


Radar is a key military device used to detect distant targets and establish defense systems, requiring high power output. Previously, vacuum tubes and gallium arsenide elements were used as radar power elements, but these were limited by their lifespan, size, and output.

The Electronics and Telecommunications Research Institute (ETRI) announced on the 22nd that it will begin a collaborative project with RFHIC Co., Ltd., the only company in Korea to offer gallium nitride (GaN) material-based products, to help it mass-produce gallium nitride integrated circuit power components for radar, with support from the Ministry of Trade, Industry and Energy and the Ministry of National Defense. The two organizations held a joint research lab unveiling ceremony and signed a business cooperation memorandum (LOI).

Gallium nitride offers signal processing speeds more than 10 times faster than silicon and is not susceptible to heat even during high-speed operation. In particular, power devices manufactured with gallium nitride are attracting significant attention due to their potential applications in a wide range of fields, including military, defense, shipbuilding, and satellite communications. However, in advanced countries, the outflow of related technologies and products is strictly controlled, so importing related parts is expensive and the introduction of technology and product supply itself is very difficult.

ETRI has successfully developed power devices operating in the 4 GHz and 26.5-40 GHz frequency bands, as well as a multi-chip integrated circuit (MMIC) chip based on these devices, using batch processing technology for manufacturing gallium nitride components. The ETRI-RFHIC research team aims to develop an integrated circuit process for mass-producing gallium nitride components in domestic fabs and provide it to foundries.

The technology developed through this joint research will be applied to actual defense components and undergo reliability testing to ensure it can effectively replace imported technologies and components. The joint research team will also conduct research on the domestic production of military components. They will also strive to overcome export restrictions and achieve domestic weapon system competitiveness by expanding frequency bands and enhancing performance.

This research is being conducted as part of the "Development of Process and Design Technology for X-Band 25W GaN Power Amplifier MMIC Components for Multi-Function Radar (MFR)" project, a collaborative project between the Ministry of Trade, Industry and Energy and the Ministry of National Defense. Furthermore, the project will receive five years of support through KEIT's Materials and Components Technology Development Project.