STMicroelectronics has introduced the next-generation power transistor family, STripFET™ VII DeepGATE™. This family consists of highly energy-efficient power devices that can reduce environmental impact in telecommunications, computing systems, solar inverters, industrial automation, and automotive applications.

The new STripFET VII DeepGATE MOSFET products not only offer improved switching efficiency but also boast the highest conduction efficiency among currently available 80V and 100V products. Furthermore, by meeting system power and efficiency targets within a small package at the level of reduced devices, they help simplify design and reduce costs and equipment size.

The key to ST’s STripFET VII DeepGATE technology lies in the enhanced gate structure of the MOSFET. This enables faster and more efficient switching by reducing internal capacitance and gate charge while lowering on-state resistance. It is also suitable for automotive applications due to its strong avalanche ruggedness capable of withstanding extreme environments.

More than 15 types of STripFET VII DeepGATE products are currently available for sample and product order. These include the STP270N8F7 80V product, and some 100V components are available in TO-220, DPAK, or PowerFLAT™ 5x6 packages, with 2-lead or 6-lead H2PAK packages also available. For orders of 1,000 units or more, the price is $1.70 for the 100V STD100N10F7 and STL100N10F7, and $3.80 for the STH310N10F7-2 product. For bulk orders, please contact ST's Korea branch (02-3489-0290 / Manager Jang Jet).