Samsung Electronics will begin mass production of its cutting-edge semiconductor process GAA technology in 2022.

Samsung Electronics held the 'Samsung Foundry Forum 2021' online on the 6th under the theme 'Adding One More Dimension'.

Samsung Electronics announced that through this forum, it introduced plans for mass production of 3nm and 2nm processes based on GAA technology and the development of a new 17nm process, and stated that it would strengthen its competitiveness in the rapidly growing foundry market by further advancing process technology, line operations, and foundry services.

In his keynote speech, Choi Si-young, President of Samsung Electronics’ Foundry Business, stated, “We will expand production capabilities through large-scale investments and continue differentiated technological innovation not only in advanced micro-processes such as GAA but also in existing processes,” adding, “Amid the rapid digital transformation driven by COVID-19, we will provide differentiated value to enable customers’ diverse ideas to be realized as chips.”

GAA technology is essential for continuing process miniaturization due to its power efficiency, performance, and design flexibility.

Samsung Electronics expressed confidence in securing next-generation transistor technology by announcing plans to introduce GAA technology to 3nm in the first half of 2022, mass-produce 2nd generation 3nm in 2023, and GAA-based 2nm process in 2025.

In particular, the 3-nanometer process using Samsung Electronics’ proprietary GAA technology, the MBCFET™ (Multi Bridge Channel FET) structure, is expected to improve performance by 30% compared to the FinFET-based 5-nanometer process, while reducing power consumption by 50% and area by 35%.

In addition, it was stated that preparations for mass production are underway for the 3-nanometer process, with a stable production yield secured.

Samsung Electronics is continuously improving its FinFET technology to provide products with cost efficiency and competitiveness across various application fields, and announced a new FinFET-based 17nm process at this forum.

The 17nm process is expected to improve performance by 39% and power efficiency by 49% compared to the 28nm process, while reducing the area by 43%.

In particular, the new 17nm process can be applied to products such as image sensors and mobile display driver ICs that primarily utilize planar transistor-based 28nm or larger processes, demonstrating the potential for expansion into various applications.

In addition, Samsung Electronics plans to support the diversification of applications for the FinFET process, such as IoT and wearable devices, by developing various options to apply the existing 14nm process to MCUs (Micro Controller Units), including 3.3V high voltage and eMRAM support, and to secure leadership in mmWave products below 6GHz in the 5G semiconductor market with its 8nm RF (Radio Frequency) platform.