June 19, 2013, Seoul, Korea – Freescale Semiconductor (NYSE: FSL), a leading provider of high-power RF technology, announced today that it is adding three LDMOS power transistors and one GaN transistor to its top-tier Airfast high-power RF solution family, designed to meet the stringent requirements of the terrestrial mobile communications market with exceptional robustness.

The new Airfast LDMOS power transistors offer an attractive combination of stability, gain, and robustness. The new Airfast GaN devices are geared toward multi-band applications by reducing complex, large, and numerous wireless devices, and together, two new solutions provide the possibility for advanced design combinations in terrestrial mobile communication applications.

Freescale’s new AFT09MS007N, AFT09MP055N, and AFT09MS015N LDMOS power amplifiers are designed to deliver perfect performance under extreme operating conditions by providing excellent performance, stability, and gain in terrestrial mobile communication wireless applications. These devices are suitable for mobile VHF, UHF, 700–900 MHz transceivers used in public safety, professional mobile wireless, and other harsh MtoM (machine-to-machine) communication environments.

These three new Airfast RF LDMOS power products are designed to withstand a voltage standing wave ratio (VSWR, a measure of line uniformity at high frequencies) of 65:1 or greater even when overvoltage and overinput are simultaneously applied to amplifiers and high-output RF transistors. Furthermore, since these devices integrate most of the circuitry required to maintain stability, design can be simplified and stability maintained across a wide range of operating environments. Freescale’s latest LDMOS Airfast high-power RF products for the terrestrial mobile communications market offer a comprehensive range of reference designs that allow for design completion with only a few inductors and capacitors. Additionally, they provide superior efficiency and linearity compared to module-based solutions within a similar footprint. Moreover, Airfast high-power RF devices generally possess an efficiency of over 65%, which is superior to modules and competing devices.

"Until now, engineers have faced significant challenges in developing large, complex, and costly multi-band systems," said Ritu Favre, Executive Vice President and General Manager of Freescale's RF business unit. "The solution recently added to Freescale's Airfast RF power product family provides mobile designers with excellent broadband performance within an ultra-compact footprint."

For wireless operators and public safety personnel, the ability to communicate with multiple agencies is critical for responding quickly, efficiently, and systematically to emergencies. Freescale’s new Airfast and AFG30S010 GaN devices provide broadband performance capable of supporting multiple terrestrial mobile bands with a single power amplifier, eliminating the need to design large, complex, and expensive multi-band systems for multi-agency communications. The AFG30S010 GaN device, offering high efficiency and advanced heat dissipation performance, provides the functionality to achieve amplifier circuit area reduction, which is essential for meeting the demands of customers requiring smaller product specifications.

Product Specifications
The new Airfast LDMOS device operates with a supply power of typically 7.5 Vdc for handheld wireless applications and 12.5 Vdc for mobile wireless applications, and has integrated electrostatic discharge (ESD) protection. The Airfast GaN device operates with a supply power of 28 Vdc.

AFT09MS007N, AFT09MP055N, AFT09MS015N
• Withstands a Voltage Standing Wave Ratio (VSWR) of 65:1 or greater under simultaneous application of overvoltage and overinput
• Reduced maintenance costs through optimized system reliability
• Reduced number of required steps and improved stability through high power gain
• Provides high efficiency, enabling simplified cooling and miniaturization of wireless equipment.

AFG30S010
• 10W output across the entire frequency band of 136 ~ 941MHz
• Withstands a VSWR of 20:1 or higher under simultaneous overvoltage and over-input conditions
• Reduced maintenance costs due to improved system reliability
• Reduced overall system cost as complex protection circuits are not required
• Provides high efficiency over a wide frequency range

Supply situation
The AFT09MS007N 7W and AFT09MP055N 55W devices are scheduled for mass production in the second quarter of 2013. The AFT09MS015N 15W and AFG03S010 devices are scheduled to be supplied in sample quantities in the fourth quarter of 2013. Reference designs and other support tools are currently available to design engineers. For more information, please visit www.freescale.com/RFpower or contact a Freescale sales office or local distributor.