Microchip Technology (Asia General Manager and Korea Representative Han Byung-don), a global leader in microcontrollers, mixed-signal, analog semiconductors, and flash-IP solutions, has expanded its radio frequency power device portfolio by launching new MMICs and discrete devices that meet the performance requirements of 5G, satellite communications, and defense applications.

Microchip announced on the 2nd that it recently released new MMICs and discrete transistors that support frequencies up to 20 GHz (gigahertz).

These devices combine PAE (Power Added Efficiency) and high linearity to provide outstanding performance in a wide range of applications, from 5G to electronic warfare, satellite communications, commercial and defense radar systems, and test equipment.

Like other Microchip GaN RF power products, this device utilizes GaN-on-SiC (Silicon Carbide) technology, providing the best combination of high power density and yield, high-voltage operation at a junction temperature of 255°C, and a lifespan of over 1 million hours.

The device includes a GaN MMIC providing up to 20W of P3dB (3dB compression point) RF output power and up to 25% efficiency in the 2–18GHz, 12–20GHz, and 12–20GHz ranges, and an S with a PAE of up to 60%Includes bare die and packaged GaN MMIC amplifiers for the -band and X-band, and discrete high electron mobility transistor (HEMT) devices providing up to 100W P3dB RF output power and up to 70% efficiency from DC to 14GHz.

Leon Gross, Vice President of Discrete Products at Microchip, said, “Microchip is continuously investing in the GaN RF family to support all applications across all frequencies, from microwaves to millimeter wavelengths. Microchip’s product portfolio includes more than 50 devices supporting power levels from low to 2.2 kW. The newly released products span the 2–20 GHz range and are designed to address linearity and efficiency issues caused by high-order modulation techniques adopted in 5G and other wireless networks, and to meet the unique requirements of satellite communications and defense applications.”

In addition to GaN devices, Microchip's RF semiconductor portfolio includes GaAs (gallium arsenide) RF amplifiers and modules, low-noise amplifiers, front-end modules (RFFE), varactors, Schottky diodes, PIN diodes, RF switches, and voltage-variable attenuators.

In addition, Microchip provides highly integrated modules that combine high-performance surface acoustic wave (SAW) sensors, micro-electromechanical system (MEMS) oscillators, and microcontrollers (MCUs) with RF transceivers (Wi-Fi® MCUs) that support major short-range wireless communication protocols such as Bluetooth®, Wi-Fi, and LoRa®.