Freescale Expands Asian Mobile Communications Market Presence with Airfast High-Power RF Solutions
Seoul, Korea – August 1, 2013 – Freescale Semiconductor (NYSE: FSL), a global leader in high-power RF (radio frequency) power transistors, held a press conference on August 1 at Freescale Korea, located in Jamsil, Seoul, announcing that it will accelerate its expansion into the Asian market—the largest market for mobile communications equipment—with its customer-tailored Airfast high-power RF product line.
William Yin, Regional Executive responsible for Asia at Freescale's RF Business Unit, stated: "Airfast transistors deliver outstanding bandwidth and linear efficiency based on stability, gain and robustness in a small circuit area, and are designed to provide optimal performance in LTE base stations and land mobile radio communications applications." He added: "Freescale is already providing high-performance RF solutions worldwide through various Airfast products, and particularly captured an overwhelming market share in the 2.3/2.6GHz TD-LTE frequency band allocated by the Chinese government at the end of last year."
The three LTE base station RF products presented this time (AFT26H160-4S4, AFT26H200W03S, AFT26H250-24S) reflect Freescale's commitment to fully support all possible system power outputs aimed at Korea's government allocation of 2.6GHz LTE frequencies.
Additionally, three RF products for land mobile radio communications applications (AFT09MS007N, AFT09MP055N, AFG30S010-01H) were announced. These products are suitable for mobile VHF, UHF, and 700–900MHz transceivers used in public safety, professional wireless mobile, and other demanding M-to-M (machine-to-machine) communication environments, and deliver flawless performance even under extreme operating conditions.
In addition to Airfast high-power RF solutions, Freescale provides comprehensive system solutions ranging from the QorIQ Qonverge platform, which serves as the foundation for a highly scalable processor product family encompassing small to large cell base stations based on a common architecture, to an extensive RF GaAs MMIC product line. The QorIQ Qonverge platform enables OEM manufacturers to reuse software regardless of base station applications, from femtocells to macrocells.
Product Information
<Three Airfast RF Transistor Products for 2.6GHz LTE Base Stations>
AFT26H160-4S4
• In-package asymmetric Doherty device providing high efficiency in a small circuit area
• Provides 200W peak output across the 2496 to 2690MHz frequency band
• Provides 45.7% efficiency and 14.9dB gain at 32W average output
AFT26H200W03S
• In-package asymmetric Doherty device providing high efficiency in a small circuit area
• Provides 250W peak output across the 2496 to 2690MHz frequency band
• Provides 45.0% efficiency and 14.1dB gain at 45W average output
AFT26H250-24S
• In-package asymmetric Doherty device providing high efficiency in a small circuit area
• Provides 300W peak output across the 2496 to 2690MHz frequency band
• Provides 43.0% efficiency and 14.5dB gain at 63W average output
<Three Airfast RF Transistor Products for Land Mobile Radio Communications>
AFT09MS007N
• 7W output across the 136 to 941MHz frequency band
• Withstands voltage standing wave ratio (VSWR) of 65:1 or greater under simultaneous overvoltage and over-input conditions
• Reduced maintenance costs through optimized system reliability
• Enhanced stability and reduced number of required stages through high power gain
• High efficiency enables simplified cooling and reduced wireless equipment size
AFT09MP055N/GN
• 55W output across the 764 to 941MHz frequency band
• Withstands voltage standing wave ratio (VSWR) of 65:1 or greater under simultaneous overvoltage and over-input conditions
• Reduced maintenance costs through optimized system reliability
• Enhanced stability and reduced number of required stages through high power gain
• High efficiency enables simplified cooling and reduced wireless equipment size
AFG30S010
• 10W output across the 136 to 941MHz frequency band
• Withstands VSWR of 20:1 or greater under simultaneous overvoltage and over-input conditions
• Reduced maintenance costs through enhanced system reliability
• Reduced overall system cost as complex protection circuitry is not required
• Provides high efficiency across a wide frequency range
Pricing and Availability
AFT26H160-4S4, AFT26H200W03, AFT09MS007N, and AFT09MP055N are currently in mass production. AFT26H250-24S is scheduled for mass production in Q3 2013, and AFG30S010-01H is scheduled for mass production by Q4 2013. Pricing information and sample availability can be obtained by contacting Freescale Korea or an authorized distributor. For more details on Freescale RF power LDMOS solutions, visit www.freescale.com/RFpower.















