Infineon Expands RF Portfolio with Launch of New Transistor for UHF TV Power Amplifiers
Published2013.11.04 10:17Seoul, October 22, 2013 — Infineon Technologies (Korea CEO Seung-soo Lee) announced 50V LDMOS transistors designed for use in UHF TV broadcast transmitters. One of the new devices provides the highest peak output among products currently available on the market for UHF TV broadcast transmitters. These new products deliver higher output across the entire 470–806 MHz TV broadcast band, allowing amplifier designers to achieve target output using fewer transistors; consequently, the simplified design reduces component count and increases reliability, thereby achieving cost savings.
The high-power PTVA047002EV delivers an average rated output of 135W and a gain of 17.5dB over DVB-T (8k OFDM) signals, which is 8 percent higher than other devices on the market. In a 12kW broadcast amplifier design, this increased power can eliminate up to 20 RF power transistors, significantly lowering overall system costs while simultaneously enhancing reliability through a reduced component count and simplified design. The lower-power PTVA042502EC and PTVA042502FC transistors provide an average output of 55W and a gain of 18.5dB over DVB-T (8k OFDM) signals, making them suitable for applications such as gap filters.
Outstanding efficiency of 26 percent (typ) at 500 MHz reduces heat dissipation. With the package's thermal resistance (Rth 0.20°C/Watt) also low, Infineon's 50V LDMOS technology enables excellent thermal management and compact heat sink designs, which lowers costs and further increases reliability.
Other important features of all Infineon 50V LDMOS transistors include high durability (withstanding 10:1 VSWR load mismatch at 3dB input overdrive), a wide gate-source voltage range (-6V to 12V), and ESD protection.
Supply and packaging
Engineering samples of the new UHF TV broadcast power transistors are currently available, and mass production of the PTVA042502EC and PTVA042502FC is scheduled to begin this quarter. Mass production of the PTVA047002EV is scheduled for the first quarter of 2014. A complete reference design/evaluation board kit, including Gerber files and related documentation, is provided.
PTVA047002EV is available in 275 style packages of eared flanged open cavity. PTVA042502EC and PTVA042502FC are available in 248 style packages of eared and earless flanged open cavity, respectively.
Detailed technical information on Infineon's portfolio of RP power transistors and integrated RF power amplifiers is available at: www.infineon.com/rfpower
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