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▲STMicroelectronics MDmesh M9 (Image provided by ST)
New MDmesh M9 and DM9 models minimize switching losses and are expected to be available by the end of the second quarter.
A new MDmesh MOSFET series, designed to increase power density and reduce system size, is about to be released. Expected to provide solutions suitable for switching-mode power supplies in a variety of applications, from data center servers and 5G infrastructure to flat-panel TVs.
STMicroelectronics (ST) announced on the 13th that it has launched the STPOWER MDmesh M9 and DM9 N-channel super-junction multi-drain silicon power MOSFETs.
ST said the device will provide a solution suitable for switched-mode power supplies (SMPS) in a variety of applications, from data center servers and 5G infrastructure to flat-panel TVs.
The first devices to be released are the 650V STP65N045M9 and the 600V STP60N043DM9, both of which feature very low on-resistance per unit area (RDS(on)) to maximize power density and miniaturize system size, the company said. The maximum RDS(on) (RDS(on)max) has an optimal value of 45mΩ for STP65N045M9 and 43mΩ for STP60N043DM9.
These devices typically feature very low gate charge (Qg) of 80nC at 400V drain voltage, resulting in the best RDS(on)max x Qg figure of merit (FoM) currently available, the company said.
The gate threshold voltage (VGS(th)) is typically 3.7 V for the STP65N045M9 and 4.0 V for the STP60N043DM9, both of which minimize turn-on and turn-off switching losses compared to the previous MDmesh M5 and M6/DM6, the company said. The MDmesh M9/DM9 series also boasts very low reverse recovery charge (Qrr) and reverse recovery time (trr), further improving efficiency and switching performance.
Another key feature of ST's latest high-voltage MDmesh technology is an additional platinum diffusion process that inherently ensures a fast body diode. Compared to previous processes, the peak diode reverse recovery slope (dv/dt) is rated to be superior. All devices belonging to MDmesh DM9 technology are described as rugged and can withstand dv/dt from 400 V to up to 120 V/ns.
ST's new MDmesh M9 and DM9 devices, the STP65N045M9 and STP60N043DM9, are already in production in TO-220 packages and will be available by the end of Q2 2022, with standard surface-mount and through-hole package options to be added in H2 2022, the company said.
Further information can be found at www.st.com/mdmesh-m9 and www.st.com/mdmesh-dm9 .
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