Kim Nam-gyun, research director at the Korea Electrotechnology Research Institute (KERI), was recognized for his contributions to the advancement of the Korean Institute of Electrical and Electronic Material Engineers through the advancement of SiC power semiconductor technology.

At the 'Korean Institute of Electrical and Electronic Material Engineers Summer Conference (June 22-24)' held in Pyeongchang, Gangwon-do, the Korea Electrotechnology Research Institute (KERI) recognized Vice President Kim Nam-gyun's contributions to the advancement of silicon carbide (SiC) power semiconductor technology and the development of the society by receiving the 'Proud Electrical and Electronic Materials Engineer Award.'

The Korean Institute of Electrical and Electronic Material Engineers (President: Kyung-Hwan Kim) is a professional organization established in 1987 to contribute to the development and dissemination of academic and technological knowledge related to electrical and electronic materials.

Vice President Kim Nam-gyun, who is also the vice president of this society, was recognized for his contributions to raising Korea's SiC technology, which had been close to a wasteland, to the level of advanced countries through networking and technology diffusion activities, such as establishing the 'SiC Semiconductor Materials and Devices Specialized Research Association' and leading the exchange of SiC power semiconductor technology.

SiC power semiconductors have superior characteristics compared to silicon semiconductors, which not only increase the efficiency of inverters but also reduce their size. It is a premium semiconductor that is being used in numerous electric vehicles at home and abroad because it can reduce weight.

Vice President Kim and the Korea Electrotechnology Research Institute's Power Semiconductor Research Group have been at the forefront of technological advancement and industrialization, including the recent development of the "trench MOSFET" technology, which not only leads to the domestic production of SiC power semiconductors but also to low-cost, mass production, and the transfer of this technology to domestic industries.

Vice President Kim, who is currently promoting the hosting of the 'ICSCRM (International Conference on Silicon Carbide and Related Materials),' an international conference on SiC semiconductors, in Korea (Busan) in 2025, said, "If we successfully secure the right to host in Busan, it will mean that Korea's SiC-related capabilities will be recognized as the first conference to be held in a country other than Japan in Asia." He did not hide his determination and expectations, saying, "We will do our best to attract ICSCRM, which will lead to a leap forward in the domestic power semiconductor industry and play a major role in strengthening the status of the Korean Institute of Electrical and Electronic Material Engineers."