Samsung Electronics plans to invest approximately 20 trillion won by 2028 to secure next-generation advanced semiconductor technology.

Samsung Electronics held a groundbreaking ceremony for its next-generation R&D complex at the Samsung Electronics Giheung Campus in Yongin, Gyeonggi Province on the 19th.

About 100 executives and employees attended the event, including Samsung Electronics Vice Chairman Lee Jae-yong, DS Division Head Kyung Kye-hyun, DS Division CTO Jung Eun-seung, Samsung Advanced Institute of Technology President Jin Kyo-young, Memory Business Division Head Lee Jung-bae, Foundry Business Division Head Choi Si-young, and System LSI Business Division Head Park Yong-in.

The Giheung Campus is where Samsung’s semiconductor business originated in 1983 and where the foundation for a ‘super gap in semiconductors’ was laid, including the development of the world’s first 64M DRAM in 1992, achieving the No. 1 position in the DRAM market in 1992, and achieving the No. 1 position in the memory semiconductor field in 1993.

Samsung Electronics plans to develop the new semiconductor R&D complex in Giheung into a state-of-the-art integrated research and development facility designed to secure a leading position in future semiconductor technology.

The Giheung Semiconductor R&D Complex is built on a scale of approximately 109,000 square meters (about 33,000 pyeong).Samsung Electronics plans to invest approximately 20 trillion won in the construction of a research complex by 2028, including a dedicated semiconductor R&D line scheduled to begin operations in mid-2025.

The R&D complex is expected to serve as a key research base for semiconductor R&D fields, including memory, fabless system semiconductors, and foundry.

The construction of Samsung Electronics' Giheung R&D complex is expected to serve as an opportunity for the domestic semiconductor industry ecosystem to grow to the next level.

Samsung Electronics plans to further strengthen R&D cooperation with domestic and international partners in the materials, equipment, and components sectors through the construction of the Giheung R&D complex.

R&D cooperation with partner companies is expected to lead to the expansion of high-quality jobs and the nurturing of excellent semiconductor R&D talent, thereby contributing to the development of the domestic semiconductor industry ecosystem.

Some equipment and materials partner companies sent video messages congratulating the groundbreaking ceremony and expressing their intention to continue future semiconductor technology cooperation.

Kyung Kye-hyun, Head of the DS Division, reported on the strategy to secure semiconductor technology competitiveness, stating, “We plan to create a virtuous cycle leading to organizational growth through various educational opportunities where excellent R&D personnel can voluntarily gather and grow.”

Following the groundbreaking ceremony, Vice Chairman Lee Jae-yong visited the Hwaseong Campus to hold a meeting with employees and a meeting with the presidents of the DS Division.

Vice Chairman Lee listened to suggestions from employees and exchanged various opinions, including measures to improve organizational culture to promote challenge and innovation.

At the DS Division presidents' meeting held at the Semiconductor Research Institute, key issues and risks surrounding the global semiconductor industry, the progress of next-generation semiconductor technology research and development, and measures to secure technological capabilities to achieve a super-gap were discussed.