Domestic researchers have succeeded in developing gallium nitride (GaN) power devices, considered key components of next-generation semiconductors, using purely domestic technology. This is expected to significantly contribute to enhancing the competitiveness of Korea's semiconductor industry and securing technological leadership.

The Electronics and Telecommunications Research Institute (ETRI) announced that it has developed world-class 'S-band 300-watt (W) class gallium nitride power device technology'.

Gallium nitride is suitable for high-voltage power semiconductors because it has a breakdown voltage more than three times higher than that of silicon (Si), which is commonly used as a semiconductor device, making it advantageous for high-voltage operation, and it does not require a separate energy storage space due to its very fast switching speed.

In addition, it can achieve power density and power efficiency more than seven times higher than gallium arsenide (GaAs), making it suitable for improving communication system efficiency and miniaturization.

For this reason, it can be applied to military radars requiring high power output, high-frequency communication systems, and power systems for electric vehicles.

It is attracting attention as a next-generation semiconductor device with high potential for future industrial and military applications.

In particular, the technology developed this time is a Gallium Nitride Integrated Circuit (MMIC) for AESA radar, a core technology for military fighter aircraft that has been developed and possessed only by the United States and Japan.It is also applicable to [another area], and is expected to contribute significantly to localization and strengthening competitiveness in the defense sector.

Countries such as the United States and Europe have been leading the technological development of gallium nitride power devices.

Due to the nature of the technology, which has high military utility, there were many restrictions on the purchase, utilization, and processing of the components.

ETRI has developed world-class gallium nitride power device technology by designing a gallium nitride high electron mobility transistor (HEMT) structure that simultaneously satisfies high power and high efficiency.

The research team packaged the developed power device chip and verified the performance of the gallium nitride semiconductor device with an output power of 300W and a power density of over 10W/mm.

It is a world-class level that surpasses the performance of existing commercial gallium nitride semiconductor devices of approximately 8.4 W/mm.

Furthermore, this is highly significant in that it was developed entirely using purely domestic technology, from design to process, measurement, and packaging.

The research team expects that by developing world-class gallium nitride power device technology using domestic capabilities, they will be able to reduce dependence on foreign semiconductor materials and narrow the technology gap.

The research team stated that they were able to achieve this result based on human and material know-how accumulated over more than 25 years of research on compound semiconductors, as well as ETRI's equipment and facilities capable of designing and fabricating semiconductor power devices.

Kang Dong-min, Head of the RF/Power Components Research Lab at ETRI, said, “I consider it very meaningful that we have succeeded in securing world-class high-output gallium nitride semiconductor power device technology using domestic technology.” "We hope that this technology will contribute to the localization of key semiconductor components, thereby enhancing the competitiveness of the semiconductor industry and helping to reduce dependence on foreign semiconductor materials," they stated.

The outlook for the gallium nitride power device market is also bright.

According to market research firm Yole Development, the market is projected to grow at an annual rate of 59% from $120 million last year to reach $2 billion by 2027.

The research team plans to enhance the output of gallium nitride semiconductor devices in the future, while also pursuing follow-up research to expand to the 5G 28GHz frequency band.

In addition, research on the localization of key semiconductor components, such as defense radar and communications and 6G next-generation mobile communications, as well as the development of gallium nitride-based integrated circuits, which are one of Japan's major export-restricted items, will be intensified.