ON Semiconductor, a leader in intelligent power and sensing technologies, introduces a new family of silicon carbide products that deliver industry-leading efficiency, delivering reliable and efficient performance in energy infrastructure and industrial applications.


Onsemi unveiled Elite Silicon Carbide (EliteSiC) as part of its silicon carbide (SiC) product line on the 4th.

Onsemi will showcase three new products at the Consumer Electronics Show (CES) in Las Vegas, USA: a 1,700 V EliteSiC MOSFET and two 1,700 V EliteSiC Schottky diodes. This new device delivers reliable, high-efficiency performance for energy infrastructure and industrial applications.

Onsemi offers a higher breakdown voltage (BV) SiC solution for high-power industrial applications with the 1,700V EliteSiC MOSFET (NTH4L028N170M1).

Additionally, two 1,700V EliteSiC Schottky diodes (NDSH25170A, NDSH10170A) enable designers to achieve stable high-voltage operation at high temperatures while providing high efficiency with SiC.

“These new 1700V EliteSiC devices not only reinforce the high standards of performance and quality of the EliteSiC family by reducing power losses and delivering best-in-class efficiency, but also further expand the depth and breadth of ON Semi’s EliteSiC offering,” said Simon Keeton, vice president and general manager of ON Semi’s Power Solutions Group. “Coupled with ON Semi’s end-to-end SiC manufacturing capabilities, we provide the technology and supply assurance to meet the needs of providers of industrial energy infrastructure and industrial application systems.”

Renewable energy applications are continuously moving to higher voltages, with solar systems operating on 1,100 V to 1,500 V DC buses. To support this transition, consumers require MOSFETs with higher BV. The new 1,700 V EliteSiC MOSFET offers a maximum Vgs range of -15 V/25 V, making it ideal for fast switching applications with gate voltage fluctuations down to -10 V, thereby enhancing system reliability.

Under test conditions of 1,200 V at 40 A (Amps), the 1,700 V EliteSiC MOSFET achieves a gate charge (Qg) of 200 nC. This represents market-leading performance compared to competing devices in the same class, which approach 300nC. Low Qg is crucial for fast switching and high efficiency in high-power renewable energy applications.

With a BV rating of 1,700 V, EliteSiC Schottky diode devices offer improved margin between the maximum reverse voltage (VRRM) and the diode's peak repetitive reverse voltage. Additionally, the new devices offer excellent reverse leakage performance, with a maximum reverse current (IR) of 40 μA at 25°C and 100 μA at 175°C. This is significantly better than competitive devices rated at 100 μA at 25°C.