This page was machine-translated and may differ from the original. View original

Providing solutions for high-performance DC-DC power conversion
Suitable for server, telecommunications, and battery protection applications
Infineon Technologies (hereinafter Infineon) enables system innovation for various applications with source-down power MOSFETs.
Infineon announced on the 18th that it is launching new OptiMOS™ source-down power MOSFETs for 25V to 150V available in a 3.3mm x 3.3mm PQFN package.
The new product family featuring bottom-side cooling and double-sided cooling configurations provides solutions for high-performance DC-DC power conversion.
This enables system innovation in applications such as servers, telecom, OR-ing, battery protection, power tools, and chargers.
These products combine Infineon's latest MOSFET technology and advanced packaging to take system performance to the next level.
Applying the source-down concept, the MOSFET die source terminal is flipped so that it faces the package footprint and soldered to the PCB.
It also features an improved clip design for the drain terminal and boasts a market-leading chip-to-package area ratio.
As system form factors continue to shrink, it has become important to reduce power loss and optimize thermal management.
Compared to PQFN 3.3mm x 3.3mm drain-down devices, these newThe product improves on-resistance (RDS(on)) by up to 25%.
Infineon's OptiMOS source-down PQFN bifacial cooling products provide an enhanced thermal interface to transfer power loss from the switch to the heatsink.
Double-sided cooling products connect the power switch to the heat sink via the most direct path, increasing power consumption capacity by up to three times compared to bottom-sided cooling source-down products.
In addition, it offers two footprint versions, increasing flexibility for PCB wiring.
Standard gate products allow for easy and rapid modification of existing drain-down designs, while center gate products connect devices in parallel to minimize driver-to-gate connections.
Maximum system performance can be achieved by using OptiMOS source-down PQFN 3.3mm x 3.3mm 25V~150V products that provide high continuous current up to 298A.
Infineon announced on the 18th that it is launching new OptiMOS™ source-down power MOSFETs for 25V to 150V available in a 3.3mm x 3.3mm PQFN package.
The new product family featuring bottom-side cooling and double-sided cooling configurations provides solutions for high-performance DC-DC power conversion.
This enables system innovation in applications such as servers, telecom, OR-ing, battery protection, power tools, and chargers.
These products combine Infineon's latest MOSFET technology and advanced packaging to take system performance to the next level.
Applying the source-down concept, the MOSFET die source terminal is flipped so that it faces the package footprint and soldered to the PCB.
It also features an improved clip design for the drain terminal and boasts a market-leading chip-to-package area ratio.
As system form factors continue to shrink, it has become important to reduce power loss and optimize thermal management.
Compared to PQFN 3.3mm x 3.3mm drain-down devices, these newThe product improves on-resistance (RDS(on)) by up to 25%.
Infineon's OptiMOS source-down PQFN bifacial cooling products provide an enhanced thermal interface to transfer power loss from the switch to the heatsink.
Double-sided cooling products connect the power switch to the heat sink via the most direct path, increasing power consumption capacity by up to three times compared to bottom-sided cooling source-down products.
In addition, it offers two footprint versions, increasing flexibility for PCB wiring.
Standard gate products allow for easy and rapid modification of existing drain-down designs, while center gate products connect devices in parallel to minimize driver-to-gate connections.
Maximum system performance can be achieved by using OptiMOS source-down PQFN 3.3mm x 3.3mm 25V~150V products that provide high continuous current up to 298A.
본 기사에 대한 정정·반론·추후보도 청구는 보도 청구 안내를, 그간 게재된 보도문은 정정·반론보도 모아보기를 참고해 주세요.















