ROHM's SiC Schottky Barrier Diodes (SBDs) are being adopted by Murata Manufacturing Group's data center power units, contributing to improved application performance and miniaturization.


ROHM announced on the 27th that its third-generation SiC SBD has been adopted by Murata Power Solutions of the Murata Manufacturing Group.

ROHM's SiC SBD 'SCS308AH', which realizes high-speed switching, is installed in Murata Power Solutions' 'D1U series' of power units for data centers, contributing to improved performance and miniaturization of applications.

Murata Power Solutions designs, manufactures, and sells DC-DC power supplies, AC-DC power supplies, magnetics, digital panel meters, and solutions for data centers, offering a lineup of standard, semi-custom, and custom products.

Murata Power Solutions' products are used in electronic devices across key global markets, including communications, computers, industrial control equipment, healthcare, and energy management systems.

Murata Power Solutions' AC-DC power supply '1U Front End' series includes a lineup of high-efficiency power factor improvement front-end power units 'D1U54P-W-2000-12-HB3C' and 'D1U54P-W-1200-12-HC4PC', allowing for multiple applications. Power units can be operated in parallel.

Additionally, the '1U Front End' series supports hot plugging and can detect and protect against high temperatures, overcurrent, and overvoltage.

Not only can it provide high-reliability and high-efficiency power to servers, workstations, storage systems, and other 12V power systems, but its thin 1U size also contributes to reducing system area.

Since becoming the world's first to begin mass production of SiC MOSFETs in 2010, ROHM has continued to advance the technological development of industry-leading SiC power devices.

The latest third-generation SiC SBDs employed by Murata Power Solutions feature a small total charge (QC), enabling low loss and high-speed switching operation. Furthermore, they achieve superior surge current tolerance compared to second-generation SBDs, while further reducing VF characteristics.