Advantages of safety, electrical protection, and reduced component costs
Minimized propagation delay of 45ns…ensuring fast dynamic response

STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has unveiled a GaN driver that it says can reduce size and reduce component costs in applications that require high wide-bandgap efficiency along with robust safety and electrical protection features.

STMicroelectronics announced today the launch of STGAP2GS, its first galvanically isolated gate driver supporting GaN transistors.

This single-channel driver can connect to high-voltage rails up to 1200 V or 1700 V for the STGAP2GSN narrow-body version, and provides gate-drive voltages up to 15 V.

Capable of sinking and sourcing up to 3 A of gate current to connected GaN transistors, it ensures precise switching transitions even at high operating frequencies.

STGAP2GS minimizes propagation delay across the insulation barrier, ensuring fast dynamic response of just 45ns.

Additionally, it prevents unwanted transistor gate changes by providing dV/dt transient immunity of ±100 V/ns over the full temperature range.

The STGAP2GS has separate sink and source pins, allowing easy tuning of gate drive operation and performance.
/> The STGAP2GS enables efficient and robust implementation of GaN technology in a wide range of consumer and industrial applications because it requires no separate components to provide optical isolation.

Key applications include power supplies for computer servers, factory automation equipment, motor drivers, solar and wind power systems, home appliances, household fans, and wireless chargers.

In addition to integrating galvanic isolation, this driver also incorporates system protection features such as thermal shutdown and Under-Voltage Lockout (UVLO) optimized for GaN technology to ensure reliability and robustness.

Two demonstration boards, EVSTGAP2GS and EVSTGAP2GSN, combine the standard STGAP2GS and a narrow-profile version of the STGAP2GSN with ST’s SGT120R65AL 75mΩ, 650V enhancement-mode GaN transistor, allowing users to evaluate the driver functionality.