March 31, 2014, Seoul — Infineon Technologies (Korea CEO Seung-soo Lee) is launching a 700W L-band RF power transistor product that provides the industry's highest output power (700W) for radar systems in the 1200–1400 MHz frequency band. The new device reduces system costs by decreasing the number of external components, improves reliability, and achieves high robustness.

Radar systems emit high-power electronic pulses in a specific frequency band and detect the return echo of these pulses to form an image of a distant object. In this demanding application, the transistors used in the pulse system's power supply must be highly efficient and capable of driving stable signals under all operating conditions.

Infineon's new power transistor PTVA127002EV is highly suitable for L-band radar systems used in air traffic control and weather observation applications. It enables low heat dissipation with high efficiency and allows for a reduction in component count with 700W output and high robustness (capable of withstanding a 10:1 VSWR load mismatch).

Based on Infineon's 50V LDMOS power transistor technology, the PTVA127002EV boasts excellent efficiency. When measured with a 300 µS 10% duty cycle pulse, it achieves 55% efficiency in the 1200–1400 MHz band with a P1dB output power of 700W, 16dB gain, and low thermal resistance characteristics.

With the addition of new products, Infineon now offers a family of RF power transistors with 25W, 50W, 350W, and 700W outputs for 1200 to 1400MHz system applications. All of these products not only provide excellent robustness but also feature a wide gate-source voltage range (-6V to 12V) and electrostatic discharge (ESD) protection as common specifications.

Engineering samples and evaluation boards are currently being supplied. Detailed technical information on Infineon's RF power transistor portfolio and RF power amplifier portfolio can be found at www.infineon.com/rfpower .