ROHM Co., Ltd. has launched a low-power, compact GaN device that can replace conventional silicon MOSFETs, reducing component volume by approximately 99% and power loss by approximately 55%.

ROHM has developed the power stage IC 'BM3G0xxMUV-LB' (BM3G015MUV-LB, BM3G007MUV-LB) that integrates a 650V GaN HEMT and a gate drive driver in a single package for use in primary power supplies used in industrial equipment such as data servers and consumer equipment such as AC adapters.

The new product integrates a dedicated gate driver, additional functions, and peripheral components optimized to maximize the performance of the next-generation power device, the 650V GaN HEMT, into a single package.

In addition, it has the performance to support all controller ICs of primary power sources, including a wide operating voltage range (2.5 V to 30 V), making it easy to use as a replacement for existing silicon MOSFETs (Super Junction MOSFETs).

Accordingly, compared to Si MOSFETs, component volume can be reduced by approximately 99% and power loss by approximately 55%, thereby achieving both low loss and miniaturization.

The new product will begin mass production in June 2023 (sample price 4,000 yen/unit, excluding tax).

Also new products and 3 evaluation boards Online sales of the products (BM3G007MUV-EVK-002, BM3G007MUV-EVK-003, BM3G015MUV-EVK-003) have also begun, and can be purchased from online parts distribution sites such as CoreStaff and Chip 1 Stop.