STMicroelectronics (ST), a global semiconductor company supporting a wide range of electronic applications and customers, is launching full-scale Gallium Nitride (GaN)-based products that support more energy-efficient and compact system designs for consumer, industrial, and automotive applications.

ST announced on the 24th that it is mass-producing enhancement-mode (e-Mode) PowerGaN HEMT (High-Electron-Mobility Transistor) devices that simplify the design of high-efficiency power conversion systems.

STPOWER™ GaN transistors provide enhanced performance in applications such as wall adapters, chargers, lighting systems, industrial power supplies, renewable energy applications, and automotive electrification.

The first two products in this product family, SGT120R65AL and SGT65R65AL, are industrial-grade G-HEMT™ with 650V Normally-Off characteristics based on PowerFLAT 5x6 HV surface mount packages.

These devices provide rated currents of 15A and 25A, respectively, and average on-resistances (RDS(on)) of 75mΩ and 49mΩ at 25°C.

Total gate charges of 3nC and 5.4nC and lowIt also minimizes energy loss during turn-on and turn-off due to parasitic capacitance.

The Kelvin source connection optimizes gate driving. Two new GaN transistors reduce the size and weight of power supplies and adapters while providing higher efficiency, lower operating temperatures, and extended lifespan.

ST plans to release new PowerGaN products, including automotive-grade devices, as well as additional power package options such as PowerFLAT 8x8 DSC and LFPAK 12x12 that support high-power applications in the coming months.

ST's G-HEMT devices support a more easy transition to GaN wide-bandgap-based power conversion technology.

GaN transistors that support the same breakdown voltage and RDS(on) as equivalent silicon devices can reduce total gate charge and parasitic capacitance with zero reverse-recovery charge.

These properties increase efficiency and improve switching performance, allowing the use of smaller passive components even at higher switching frequencies, thereby increasing power density.

It is possible to reduce size while improving application performance. Furthermore, GaN is expected to realize new power conversion topologies in the future that further improve efficiency and reduce power loss.

ST possesses outstanding production capabilities for PowerGaN discrete products, enabling it to respond to customer demand by rapidly transitioning to mass production.

PowerFLAT 5x6 HV-based SGT120R65AL and SGT65R65AL are currently available at $2.60 (SGT120R65AL) and $50 (SGT65R65AL) for a purchase of 100 units.