ROHM Corporation has succeeded in developing an ultra-high-speed gate driver IC that contributes to the miniaturization and low-power operation of LiDAR, data centers, etc. through industry-leading nanosecond gate driving.

ROHM announced on the 21st that it is mass-producing the gate driver IC 'BD2311NVX-LB', which drives GaN devices at ultra-high speeds.

The new product realizes a gate driving speed of nanoseconds (ns), enabling high-speed switching of GaN devices.

These characteristics were realized by pursuing performance improvements in gate driver ICs based on a thorough understanding of GaN devices.

It contributes to miniaturization, low power consumption, and high performance of applications through high-speed switching with a minimum gate input pulse width of 1.25ns.

In addition, by adopting a proprietary driving method, it is equipped with a function to suppress overshoot of the gate input waveform, which was difficult to realize in the past, thereby preventing failure of the GaN device due to overvoltage input.

When configured with ROHM’s EcoGaN™, set design becomes easier and contributes to improving application reliability.


In addition, the optimal GaN device can be selected by adjusting the gate resistance for various application requirements.

Mass production of the new product began in September 2023 (sample price: 900 yen/unit, excluding tax).

In addition, online sales have also begun, and it is possible to purchase from online component distribution sites such as Chip 1 Stop and CoreStaff.

ROHM is striving to contribute to a sustainable society by providing GaN devices that contribute to low power consumption and miniaturization as part of its 'EcoGaN™' lineup, while also offering power solutions that combine these devices with gate driver ICs that maximize their performance.