June 3, 2014, Seoul — NXP Semiconductors (NASDAQ: NXPI) announced that it will unveil innovative RF solutions at IMS 2014 that enhance wireless/cellular networks and digital broadcast infrastructure capabilities to further solidify its leadership in the RF field. Recently, demand for high-quality mobile data services has exploded, and new markets related to digital TV and radio programming are emerging. Accordingly, NXP plans to address the power, quality, efficiency, and cost challenges currently faced by network and service providers by leveraging its expertise accumulated over the past 50 years in the RF field. At IMS 2014 (Booth 1733), NXP Semiconductors will showcase its latest RF portfolio and demonstrate applications that highlight the potential of RF as an energy source.

NXP launches the TFF1044, the world's most integrated QUAD LNB application solution. Thanks to NXP's proprietary SiGe process, the highest level of integration has been achieved, including biasing capabilities as well as a complete matrix involving the selection of one of four receive channels connected to an output combined into a single device. With the highly stable and easy-to-implement TFF1044, satellite system designers can create QUAD solutions in half the board space required for typical discrete implementations.

NXP is launching Gen 9 LDMOS RF power transistors for high-performance LTE base stations. These power transistors are a groundbreaking product that enables enhanced LDMOS transistor performance, demonstrating up to 5% efficiency improvements in Doherty applications. The first Gen9 transistors are designed for Doherty applications (symmetric and asymmetric) and provide reference power density in existing high-volume packages. In addition, Gen9 technology is optimized for 3.4-3.8 GHz operation based on the expectation that the 3.4-3.8 GHz frequency band will be available globally next year for mobile carrier use.

NXP will emphasize that the latest products are being added to its industry-leading portfolio of plastic transistors for wireless and cellular base stations. By replacing existing ceramic packages with plastic, these transistors can reduce power amplifier costs by up to 30%. As such, NXP’s plastic portfolio has proven to be particularly well-suited for cost-sensitive applications due to its excellent cost-effectiveness. The plastic transistors are available in low-to-medium power and in both single and dual phases, and the MMICs included in this portfolio are optimized for the Doherty performance of small cells.

NXP will also emphasize that MMICs and iDPAs (integrated Doherty power amplifiers), specifically designed for small cell LTE base stations including picocells and microcells, are being added to the LDMOS transistor family. The frequency range of the RF power transistors included in this portfolio is very wide, from 700 MHz to 2.7 GHz, and includes the world's first asymmetric MMICs as well as low-cost, low-power plastic devices. In particular, the BGU805x broadband LNA series, which features very low noise figures to achieve peak performance in the receive chain, entered mass production in late 2013.

Based on pioneering R&D activities in the RF field, NXP is showcasing various applications that utilize RF power as a high-efficiency, controllable clean energy source at IMS2014. Various demonstrations are prepared utilizing NXP’s industry-first RF power transistor, specifically designed for the 2.45 GHz ISM frequency band, including RF spark plugs for automotive engines, RF plasma lamps that emit bright light like sunlight, and solid-state (SS) ranges that can heat food safely and very accurately.

Thijs Tullemans, International Product Marketing Manager for RF Power at NXP Semiconductors, said, “From contributing to building eco-friendly networks with high-efficiency solutions to reducing development and manufacturing lifecycles through superior device integration, NXP is becoming a key partner for all companies producing RF-based applications. IMS 2014 provides a great opportunity to introduce NXP’s latest RF innovations, including cutting-edge RF energy demonstrations that showcase NXP’s commitment to developing smart solutions across all industries. Because every device built by NXP is backed by 50 years of leadership in the RF sector, NXP customers can be assured of best-in-class products that are highly efficient, have a small footprint, and accelerate time-to-market.”