STMicroelectronics Expands Supply and Enhances Performance of Aerospace-Grade Power Electronics

With the increasing commercialization of aerospace technology, perfect aerospace-grade power devices
Designing and manufacturing in Europe makes parts procurement easier

Korea, June 17, 2011 – STMicroelectronics ( www.st.com ), a world-leading integrated semiconductor company, has launched a thoroughly certified power transistor product for electronic subsystems of board satellites and launch devices amidst growing global demand for satellite communications, TV, weather forecasting, and geographic information.

According to the Satellite Industry Association, the global satellite industry is continuously growing and currently forms a market worth over $160 billion annually. Although electronic equipment essential to the satellite industry is being developed in various regions, including Europe and Asia, most components are developed and produced in the United States. Under these circumstances, ST’s new radiation-hardened power MOSFET family was developed with the support of the European Space Agency and the French National Space Centre (Centre National d'Etudes Spatiales), and is being produced in Europe with full ESCC (European Space Components Coordination) specification certification.

With the launch of ST’s new products, the global supply of aerospace-certified components will not only be streamlined but also resolve issues such as project completion delays and trade restrictions that prevented the supply of specific components. “ST’s new Rad-Hard power MOSFET family meets aerospace requirements and is the first aerospace power device supplied by a European manufacturer,” said Ian Wilson, General Manager of ST’s Power Transistor business unit.

The new radiation-hardened power MOSFET family consists of five N-channel and P-channel devices, including the STRH100N10, STRH8N10, and STRH40P10, which extend current ratings from 6A to 80A and provide a voltage rating of 100V, and the STRH100N6 and STRH40N6, which provide a voltage rating of 60V. The 100V P-channel devices provide a current rating of 34A. Featuring low gate charge characteristics characterized by ST’s STripFET technology that enhances switching performance, it is ideally applied in DC power modules such as motor controllers and linear regulators, as well as in line switches and power-limiting e-fuses.

Key Features of ST’s Aerospace-Certified Power MOSFETs:
• High-speed switching performance
• 100% Avalanche Test Completed
• Sealed package
• 70/100 krad TID (Total Ionizing Dose) resistance
• SEE radiation curing

The STRHxxxN10, STRHxxxN6, and STRH40P10 product families are available in TO254-AA and TO-39 through-hole packages at EM (Engineering Model) or ESCC aviation quality levels.