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Samsung Electronics Develops 8th Generation V-NAND-Applied Automotive SSD

Preferred source on GooglePublished2024.09.24 08:36

50% improvement in power efficiency compared to previous models, Ondivas AI optimization

Samsung Electronics has taken a lead in the automotive memory market by launching an automotive SSD that uses 5nm 8th generation V-NAND, enabling fast access to high-capacity files at the industry's fastest speed.

Samsung Electronics announced on the 24th that it has completed the development of the AM9C1, a PCIe 4.0 automotive SSD that uses the 8th generation V-NAND for the first time in the industry.

Samsung Electronics provided 256GB samples to major customers.

This 256GB product offers sequential read/write speeds of 4,400MB/s and 400MB/s respectively, and power efficiency has been improved by approximately 50% compared to its predecessor, making it optimized to support on-device AI functions in vehicles.

This product features: △5nm-based controller, △enhanced board-level reliability evaluation, and △SLC mode function.

By converting the product from TLC to SLC through the SLC mode function, the sequential read/write speed of the SSD increases, allowing faster access to large-capacity files in the vehicle.

This product satisfies the AEC-Q100 Grade2 automotive semiconductor quality standard, ensuring stable performance over a wide temperature range from -40℃ to +105℃.

Samsung Electronics Memory Business Division Product Planning Team Managing Director Hyun-Deok Cho said, “Samsung Electronics is collaborating with industry-leading global autonomous driving companies, and through this product, we are achieving high capacity and;We expect to be able to satisfy the demand for high-performance products,” he said, adding, “We will continue to lead the physical AI memory technology and related markets, such as autonomous driving and robots.”
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