Generation II XS™ DrMOS devices provide 94% efficiency in a 6mm x 6mm form factor.
Published2011.06.01 17:01Fairchild Semiconductor Generation II XS™ DrMOS Devices Provide 94% Efficiency in a 6mm x 6mm Form Factor
Considering efficiency, characteristics, and PWM controller
A broad portfolio enabling optimal device selection
High efficiency, high current handling capability, and a small form factor are critical to power supply designers when selecting components for voltage rectifier solutions. To meet these demands, Fairchild Semiconductor, a leading global supplier of high-performance power and mobile products, has developed the Generation II XS™ DrMOS [Integrated Driver + MOSFET] family, which provides high efficiency and power density to enable designers to satisfy the specific design requirements of various applications.
Generation II XS™ DrMOS devices feature a high-load efficiency of over 91.5% and a peak efficiency of 94% in a small 6mm x 6mm high-performance clip PQFN package under conditions of 12Vin, 1Vout, and 25A. Generation II XS™ DrMOS operate at a switching frequency of 2MHz and support a current handling capability of up to 50A.
By maximizing its expertise in MOSFETs, gate driver ICs, and packaging technology, Fairchild has optimized Generation II XS™ DrMOS devices for better efficiency and developed new features. These enhanced features have created the Generation II XS™ DrMOS family, which is ideal for applications such as blade servers, high-performance gaming motherboards, high-performance laptops, graphics cards, and high-current DC-DC point-of-load (POL) converters.
The devices in this product family provide 5V and 3.3V Tristate levels that meet Intel® DrMOS 4.0 specifications and are compatible with various PWM controllers on the market. The Generation II XS™ DrMOS product family significantly reduces ringing by applying PowerTrench® MOSFET Shielded Gate technology to both the control and synchronous FETs. By incorporating Schottky diodes into the synchronous FETs, external snubber circuitry can be eliminated, improving overall performance and power density while reducing space and cost. Generation II XS DrMOS devices also include a thermal warning function to prevent overheating during unexpected failure situations, ensuring customer safety.
The Generation II XS DrMOS portfolio can meet diverse customer and application requirements.
Device Family Part Number Amps Efficiency at 12Vin, 1Vout, 25A Internal Regulator PWM Input Thermal Protection Gate Drive Voltage Applications
05 Family FDMF6705
40A >89%
No. 5V
Tri-state Warning 5V Gaming, Desktops, and Notebooks
FDMF6705V
40A >89%
Yes 5V
Tri-state Warning 5V Gaming and Desktops
06 Family FDMF6706C
45A >91% No 5V
Tri-state Warning 5V Servers and Telecom
07 Family FDMF6707B
50A >91.5%&nb
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