TI Korea (CEO Kent Chon, www.ti.com/kr) March 17, 2015 – TI (CEO Kent Chon) announced the release of the industry's first 80V, 10A field-effect transistor (GaN) FET power stage prototype. The newly introduced power stage features a half-bridge configuration consisting of a single high-frequency driver and two GaN FETs, and is available in a simple-design Quad Flat No-leads (QFN) package. (For more information, please refer to www.ti.com/lmg5200-pr-kr)

The new LMG5200 GaN FET power stage is expected to contribute to accelerating the adoption of next-generation GaN power conversion solutions, providing increased power density and efficiency for space-constrained frequency and communications applications. This power unit is being showcased as part of the 48V digital power demonstration at APEC (Applied Power Electronics Conference, Booth #1001), taking place in Charlotte, North Carolina, USA, from March 16 to 18. (For more information, please refer to www.ti.com/APEC15)

Steve Lambouses, Vice President of TI’s High Voltage Power Solutions business unit, stated, “One of the biggest obstacles to GaN-based power design has been the parasitic components resulting from GaN FET driving, the associated uncertainties, and the consequent packaging and design layout,” adding, “TI has enabled power designers to realize the potential of GaN technology by providing a complete and reliable power conversion ecosystem of integrated modules, drivers, and high-frequency controllers optimized with advanced, easy-to-design packaging.”

Realization of GaN advantages

Developers using GaN FETs that switch at high frequencies must design board layouts very carefully to avoid ringing and electromagnetic interference (EMI). TI's LMG5200 dual 80V power stage prototype significantly mitigates these issues and increases power stage efficiency by reducing packaging parasitic inductance in the critical gate-drive loop. The LMG5200 adopts advanced multi-chip packaging technology and is optimized to support power conversion topologies with frequencies up to 5 MHz.

The easy-to-use 6mm x 8mm QFN package eliminates the need for underfill, which can significantly simplify manufacturing. The reduced footprint enhances the value of GaN technology and promotes the adoption of GaN power designs in a variety of new applications, ranging from high-frequency wireless charging applications to 48V communications and industrial designs. (For more information on GaN solutions, please refer to www.ti.com/gan-pr)

Key Features and Advantages of the LMG5200

• Highest Power Density: Single-stage conversion enabled with 25% less power loss than silicon-based designs using the industry's first integrated 80V half-bridge GaN power stage.

• Comprehensive GaN-Specific Quality Program for Reliability Improvement:

• Lowest Packaging Parasitic Inductance: Reduces EMI while improving power stage efficiency and dV/dt immunity by realizing the lowest packaging parasitic inductance in the critical gate-drive loop.

• Simplified layout and manufacturability: The easy-to-use QFN package eliminates the need for underfill, resolving high-voltage clearance issues, improving board manufacturing ease, and reducing costs.

Tools and software

The LMG5200 Evaluation Module (EVM) is currently available for purchase, and developers can get started with designs faster using PSpice and TINA-TI models for the LMG5200, which can simulate the performance and switching frequency advantages of this technology.

Supply timing and price

Prototype samples of the GaN power stage are currently available for purchase at the TI store. The LMG5200 can be purchased for $50 per unit, up to a maximum of 10 units, and the LMG5200 EVM is being sold for $299.

More detailed information on TI's LMG5200 GaN FET power stage

• TI’s extensive GaN solution portfolio

• Download related white paper

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