March 30, 2015, Seoul — Infineon Technologies (Korea CEO Seung-soo Lee) announced the expansion of its GaN-on-Silicon technology and product portfolio. Infineon’s enhancement mode and cascode GaN (gallium nitride) based platforms are optimized for high-performance applications requiring very high energy efficiency, such as switch-mode power supplies (SMPS) for servers, telecommunications equipment, portable power supplies, and Class D audio systems. As GaN technology can significantly reduce the size and weight of power devices, it is expected to realize new possibilities for end products such as ultra-thin LED TVs.

Andreas Urschitz, President of Infineon’s Industrial and Multimarket Business Unit, stated, “Through the acquisition of International Rectifier (IR)’s GaN platform and our collaboration with Panasonic, Infineon’s GaN-on-Silicon portfolio is solidifying its leading position in the promising GaN market. This aligns with Infineon’s ‘Product to System’ strategy, enabling customers to select enhancement mode or cascode architecture technologies based on their application and system needs. Furthermore, Infineon is accelerating the development of Surface Mount Device (SMD) packages and ICs to ensure that the exceptional performance of GaN can be fully utilized within a miniaturized footprint.” "To give a practical example, using Infineon's GaN technology, it is possible to create a small charger that is only one-quarter the size and weight of laptop chargers currently on the market," he said.

Infineon's expanded product portfolio, including dedicated driver and controller ICs, will enable topologies and high frequencies that fully leverage the advantages of GaN. Furthermore, it is significantly enhanced by an extensive patent portfolio, GaN-on-Silicon epitaxy processes, and 100V to 600V technologies secured through the acquisition of IR. In addition, through a strategic alliance with Panasonic, Infineon and Panasonic plan to jointly supply devices that integrate Panasonic's "normally-off" (enhancement mode) GaN-on-Silicon transistor architecture into Infineon's Surface Mount Device (SMD) packages. Consequently, customers can enjoy the additional benefits of "dual sourcing," obtaining highly efficient and user-friendly 600V GaN power devices from two companies.

With this, Infineon is now able to provide customers with complete system know-how and the industry's most comprehensive GaN technology and products. It also possesses outstanding manufacturing capabilities and production capacity, and has secured a second-tier supplier of “normally-off” GaN power devices provided in Infineon SMD packages.

GaN-on-Silicon technology provides enhanced power density and higher energy efficiency with a smaller footprint compared to silicon-based solutions. Therefore, it is suitable for use in various types of applications, ranging from consumer products such as TV power supplies and Class D audio amplifiers to SMPS for servers and telecommunications equipment. According to research by market research firm IHS, the GaN-on-Silicon power semiconductor market is projected to grow from $15 million in 2014 to $800 million in 2023, growing at a CAGR (Compound Annual Growth Rate) of over 50 percent.