STMicroelectronics Launches Innovative RF Power MOSFET to Extend Lifespan of Broadcast and Medical Imaging Equipment

New RF power MOSFET family, the industry's most powerful silicon
Improved reliability and performance through integration into a highly thermally efficient package

– STMicroelectronics ( www.st.com ), a world-leading integrated semiconductor company and a global leader in power semiconductors, has launched the latest high-frequency power transistor. This new product enables high-power radio frequency equipment, such as medical scanners and plasma generators, to improve uptime and performance while saving costs.

ST's latest RF power MOSFETs, utilizing ST's upgraded process technology, are capable of withstanding peak voltages of up to 200V. This is at least 20% higher than competing products. This enhanced robustness extends the operating life of power transistors and reduces equipment downtime and maintenance costs. Furthermore, by applying advanced process technology to improve MOSFET gain, efficiency, and high-power characteristics, equipment performance can be enhanced and design simplified.

The new RF power MOSFET improves reliability by rapidly removing thermal energy from the die through the use of the latest sealed ceramic package and STAC® (ST Air Cavity) package technology. Through this, equipment maintenance costs can also be saved.

The SD4931 and SD4933 are 150W and 300W N-channel RF power MOSFETs for use in 50V DC large-signal applications up to 250MHz. The SD4931 and SD4933 are provided in rimmed sealed ceramic packages to enable "bolt-down" mounting by taking advantage of ST's enhanced vertical silicon process technology.

The STAC4932B and STAC4932F utilize ST's STAC package and are supplied in "bolt-down" and "flangeless" versions, making them ideal for 100V pulse applications with power ratings exceeding 1000W, such as laser driving or MRI (medical resonance imaging). Since the STAC package allows for direct soldering to a heatsink using a thermal base, it achieves high thermal and electrical efficiency, enabling MOSFETs to generate high signal power at high frequencies and ensuring reliability over their entire operating life.