Fairchild Semiconductor's 60V PowerTrench® for minimizing conduction and switching losses
MOSFET power supply

- Reduced footprint, higher power density, and increased design efficiency

Power designers involved in secondary synchronous rectification in DC-DC power supplies, motor control, hot swap, load switch applications, and servers require MOSFETs with low conduction and switching losses to maximize design efficiency.

To meet these demands, Fairchild Semiconductor, a leader in high-performance power and mobile products, has released the FDMS86500L, an N-channel PowerTrench® MOSFET. This product is designed to improve the overall efficiency of DC-DC converters by minimizing conduction losses and ringing at the switch stage.

The FDMS86500L can minimize conduction loss with a low RDS(ON) of 2.5 mΩ (@ VGS = 10 V, ID = 25 A) in an industry-standard Power56 (5 mm x 6 mm) package through Fairchild’s leading package and silicon technology.

In addition, the shielded-gate MOSFET structure of the FDMS86500L can also reduce switching losses (typ. Qgd, 14.6 nC). These characteristics, along with the product's low conduction loss, provide power supply designers with higher power density.

The FDMS86500L provides high efficiency and low power loss in accordance with efficiency standards and regulations with an improved FOM (RDS(ON) * QG).

Other features of the FDMS86500L include improved body diode technology to reduce recovery loss, a robust package design with MSL 1, 100% UIL testing, and RoHS compliance.

The FDMS86500L is the first in Fairchild's new 60V MOSFET portfolio