May 21, 2015 – Analog Devices (www.analog.com, NASDAQ: ADI), a global leader in high-performance semiconductors for signal processing applications, has unveiled a new single-pole double-throw (SPDT) switch. Specialized for the 9KHz to 13GHz frequency band, this product offers low insertion loss of 0.6dB at 8GHz and high isolation characteristics of 48dB. The HMC1118LP3DE is the first product in ADI’s RF and microwave control family to demonstrate the advantages of Silicon Process Technology, which significantly outperforms the performance of existing gallium-arsenide (GaAs) RF switches. In particular, it boasts much superior performance compared to GaAs RF switches in terms of key specifications, such as a settling time 100 times faster than GaAs, a stable electrostatic discharge (ESD) protection function of 2kV (GaAs is 250V), and frequency scalability that lowers the low-frequency range by 1,000 times compared to GaAs, while maintaining high linearity of the switch.

In addition, the HMC1118LP3DE is an industry-leading SPDT switch capable of withstanding 4W of RF power in always-on mode and 0.5W in hot-switching mode. Because its power handling capability during hot-switching is more than double that of competing products in similar RF bands, engineers can increase RF power tolerances in applications and systems without the risk of component damage. The HMC1118LP3DE is optimized to provide high isolation and very uniform transfer characteristics from the lowest stable operating frequency range of 9 kHz to a high operating frequency range of up to 13 GHz. Thanks to these characteristics, the HMC1118LP3DE is suitable as a low-cost replacement for expensive GaAs switches in tests and measurements, automated test equipment (ATE), defense electronics, and wireless communications that require high system specifications.

Key specifications of the HMC1118LP3DE SPDT switch

- 50Ω non-reflective design

-   Positive control: 0/+3.3 V

-   Low insertion loss: 0.68dB at 8GHz

-   High isolation characteristics: 50dB at 8GHz

-   Low cutoff frequency of 9KHz

-   7.5 usec required to set the final RF output level to 0.05 dBfast settlement time

-   Industry-leading high power processing capability:

+35.5dBm in through-pass mode, which is always ON without switching.

+27dBm in the terminated pass of hot switching mode

-   High linearity:

P1dB: +37dBm(typ.)

IIP3: +61dBm(typ.)

ESD Rating: 2KV HBM