June 15, 2015, Seoul, Korea - Freescale Semiconductor (www.freescale.co.kr, CEO Hwang Yeon-ho), a world leader in RF (radio frequency) power transistor technology, has announced two new ultra-wideband RF power GaN transistors in an advanced plastic package. Through this new package and product, Freescale has achieved significant progress toward its goal of unlocking the true potential of GaN performance and supplying industry-leading GaN devices.

Paul Hart, Executive Vice President and General Manager of Freescale's RF Business, stated, "These two new products deliver industry-leading bandwidth, making it possible to replace two or three individual RF PAs with a single RF product line, significantly reducing system costs. Additionally, these devices feature extremely low thermal resistance, allowing for reduced cooling system costs or operation at maximum CW-rated output power up to significantly higher case temperatures."

The new OM-270 package, available in 2-lead and 8-lead configurations, extends Freescale's proprietary OMNI™ RF plastic packaging technology to the smallest form factor with GaN compatibility.

Mali Mahalingam, Freescale Consultant and RF Package Development Manager, stated, "Freescale has innovated its capability to metallurgically bond GaN-on-SiC die to copper flanges and overmold them to deliver exceptional thermal performance. Additionally, this new package platform supports complex internal interconnect architecture, providing outstanding broadband performance."

Freescale's first two plastic RF power GaN transistors leverage the advantages of this advanced packaging technology to deliver performance in a new dimension:

· MMRF5015N: A 100W, 50V, true CW ultra-wideband GaN transistor optimized for high-power military and commercial communications systems. The MMRF5015N features thermal resistance below 0.8°C/W, representing over 30% improvement compared to competitive products. MMRF5015N samples are currently available in evaluation fixture form, demonstrating exceptional performance across 200 to 2500MHz bandwidth with a minimum gain of 12dB and 40% efficiency across the entire band.

· MMRF5011N: A 10W, 28V, true CW ultra-wideband GaN transistor providing 200 to 2600MHz bandwidth in applicable application circuits. Optimized for low-power military and commercial compact wireless communication devices, MMRF5011N samples are currently available.

Both new products, scheduled for mass production in the third quarter of 2015, are included in Freescale's Product Longevity Program, just like all other products in the RF military portfolio. Detailed program terms and conditions and the list of available products can be found at www.Freescale.com/productlongevity.