SAN JOSE – June 15, 2015 – Fairchild (NASDAQ: FCS), a leading global supplier of high-performance semiconductor solutions, announced plans to significantly reduce energy losses by up to 30 percent with its fourth-generation 650V and 1200V IGBT devices. Fairchild’s new design approach, tailored specifically for high- and medium-speed switching applications in the industrial and automotive markets, delivers industry-leading performance with exceptionally strong latch-up immunity, enabling superior robustness and reliability. Fairchild will present this approach, along with test results across multiple applications, at PCIM Asia 2015.

“Manufacturers are very interested in more advanced IGBTs as a means of reducing their switching losses and will soon be able to improve the efficiency of their products,” said Victoria Fodale, senior IHS analyst, adding, “It is therefore natural that minimizing power losses is key to achieving the highest levels of efficiency in a wide range of applications, from electric vehicles and solar power systems to high-efficiency HVAC applications and industrial inverters.”

Fairchild utilizes an advanced high-density pitch, self-balancing cell build with novel self-aligned contact technology to deliver very high current density and excellent dynamic switching performance across the full temperature range of -40ºC to 175ºC. This new design enables customers to achieve higher system efficiency with the 4th generation IGBTs, which boast an extremely low saturation voltage (Vce(sat) = ~1.65V) and low switching loss (Eoff = 5µJ/A) trade-off characteristics. Fairchild also provides access to a robust design and simulation infrastructure package calibrated for all low- and high-voltage power devices with this new generation of products.

“Fairchild’s new approach features very high electron injection efficiency enhanced by an ultra-fine cell pitch design and hole carrier injection limited by a novel buffer structure,” said Thomas Neyer, research scientist at Fairchild. “These advancements create significant performance advantages and enable Fairchild to provide manufacturers with a new solution to effectively manage the enormous power output of our IGBTs.”

A presentation of 2 IGBT-related papers will be held at the Poster Session on Thursday, June 25, from 12:30 to 14:00 in the Floyer Room of the Shanghai World Expo Exhibition & Convention Center.

-4th Generation Field-Stop IGBTs Offering High Performance and Enhanced Latch-Up Immunity (Presenter: Kevin Lee)

- Study on the VCE slope of field-stop IGBTs (FS IGBTs) during low-current turn-off transients in inductive load switching (Presenter: Rafael Lim)

Product details for Fairchild's FS4 IGBT family will be released in the fourth quarter of 2015. Further information, including a white paper detailing Fairchild's FS4 IGBT technology, can be found on Fairchild's IGBT product information page.