July 15, 2015 – Analog Devices (www.analog.com, NASDAQ: ADI), a global leader in high-performance semiconductors for signal processing applications, has launched the HMC1127 and HMC1126 Monolithic Microwave Integrated Circuits (MMICs), which are distributed power amplifiers. The power amplifier dies, covering a frequency range of 2 to 50 GHz, eliminate the need for inter-band RF switches, simplifying system design and improving performance. Each amplifier includes internally matched 50Ω I/O, facilitating easy integration into multi-chip modules.

The inside of the chip is connected to the die with wire bonds having a length of 0.31 mm (12 mils) and a diameter (wire bonds) of 0.02 mm (1 mil). HMC1126 and HMC1127, based on GaAs (gallium-arsenide) pHEMT (pseudomorphic high-electron mobility transistor) designs, are suitable for use in instrumentation, microwave radio, and VSAT antennas, aerospace and defense systems, communications infrastructure, and fiber optic applications.

Key Features of HMC1127 GaAs pHEMT MMIC Distributed Power Amplifier:

• P1dB output power: 12.5dBm

• PSAT output power: 17.5dBm

• Gain: 14.5dB

• Output IP3: 23dBm

• Supply voltage: +5 V at 80mA

• I/O corresponding to 50Ω

• Die size: 2.7 x 1.45 x 0.1mm

Key Features of HMC1126 GaAs pHEMT MMIC Distributed Power Amplifier:

• P1dB output power: 17.5dBm

• PSAT output power: 21dBm

• Gain: 11dB

• Output IP3: 28dBm

• Supply voltage: +5 V at 65mA

• I/O corresponding to 50Ω

• Die size: 2.3 x 1.45 x 0.1mm

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