TI Launches NexFET™ Power Block Device in 3x3mm Package

TI Korea (CEO Jaejin Kim, www.ti.com/ww/kr ) March 16, 2011 – TI has launched a new NexFET power block device in a space-saving 3mm x 3mm SON package. This new CSD86330Q3D power block package achieves over 90% efficiency at 15A in half the size of competing solutions implemented with two discrete power MOSFETs in 3x3mm QFN packages. The power block offers significant advantages in terms of power dissipation and output current performance, supporting applications such as servers, desktops, laptops, networking equipment, mobile communications infrastructure, high-end consumer applications, and commercial power supplies. (For more information, please refer to www.ti.com/powerblock-prkr )

The CSD86330Q3D is part of TI's award-winning NexFET Power Block device family, which won the Product of the Year award from Electronic Products magazine in 2010. Every year, the editorial staff of Electronic Products selects a few outstanding products from among the thousands of new products released during the year. This device was selected in recognition of its innovative design and significant performance improvements. The CSD86330Q3D was also selected as one of the "Hot 100 Products of 2010" by EDN magazine and won the "Tech Awards 2010 Reader's Choice" by EDN magazine.

Key Features and Benefits of the CSD86330Q3D Power Block
• The 3x3mm SON outline is half the size of two discrete MOSFETs provided in a 3x3mm QFN package.
• Improved efficiency by raising the temperature by only about 35°C without airflow under 15A conditions
• Reduce board space by up to 10mm² through high power density
• Switching frequency can be doubled without additional power loss, reducing the size and cost of output filters compared to competing solutions
• Simplifies layout and improves thermal characteristics with SON package featuring exposed ground pads