Equipped with Fast-Recovery Diode
Implements proprietary MDmesh™ DM2 Super-Junction Technology

STMicroelectronics has newly launched a high-voltage N-channel power MOSFET product family for automotive applications.

The devices are AEC-Q101 certified, equipped with fast-recovery diodes, and implemented using ST's cutting-edge MDmesh DM2 super-junction technology. Breakdown voltage ranges from 400V to 650V and above, offered in D2PAK, TO-220, and TO-247 packages.

Among these, the 400V and 500V devices are the first products to receive AEC-Q101 certification at these breakdown voltages, while the 600V and 650V devices offer significantly superior performance compared to competing products.

All these devices are optimized for automotive applications requiring integrated fast body diode, more flexible communication capabilities, and back-to-back gate-source zener protection functionality. They are suitable for full-bridge zero-voltage switching topologies.

ST's new power MOSFETs deliver best-in-class performance in both Trr/Qrr and flexibility in the automotive market. With excellent turn-off energy (Eoff) performance at high currents, they also contribute to improving the efficiency of automotive power supply units.

Additionally, the superior performance of the fast body diode alleviates EMI issues and enables the use of smaller passive-filtering components. In this way, MDmesh DM2 technology prevents energy loss, maximizes efficiency, and minimizes form factor, enabling more environmentally friendly power implementation.

The D2PAK package-based 500V device offers very low gate charge of 44nC and input capacitance of 1850pF, with low on-resistance as its main characteristics. The TO-247 package-based 600V device features fast reverse recovery time of 120ns @ 28A, while the TO-247 package-based 650V device features 135ns @ 48A and supports gate-source zener protection.

This product is supplied at prices between 3 and 10 dollars per unit depending on breakdown voltage and package type.