Fairchild Semiconductor's UniFET™ II MOSFET optimized for consumer electronics power converters

Providing high efficiency and reliability to flat panel displays, lighting systems, PC power, and smart green power

Switch-mode power supply designers require high-voltage MOSFETs capable of withstanding reverse recovery current spikes and reducing switching losses. Fairchild Semiconductor, possessing advanced MOSFET technology, has developed optimized power MOSFETs such as the UniFET™ II, which features an improved body diode, reduced switching losses, and the ability to withstand twice the current shock during diode recovery dv/dt modes.

Fairchild's UniFET II MOSFET provides 50% better reverse recovery than existing products. Slow reverse recovery can lead to high reverse recovery current spikes, higher switching losses, and make it unsuitable for temperature-sensitive power MOSFETs. Fairchild's solution can withstand more than twice the current stress of existing solutions.

The UniFET II MOSFET is based on Fairchild’s advanced planar technology, which provides a better performance index (FOM: RDS(ON) * Qg). With low I/O capacitance and superior reverse recovery, the MOSFET delivers high efficiency. Furthermore, by packaging a high amount of power into a small package without excessive heat, it improves the overall efficiency of applications such as LCD TVs, PDP TVs, SMPS for lighting systems, PC power supplies, servers, and communication power supplies.

The first products of the UniFET II MOSFET are the N-channel FDPF5N50NZ and FDPF8N50NZ. The FDPF5N50NZ is a 500V, 4.5A, 1.5Ω product featuring an RDS(ON) of 1.38Ω (Typ.) and a low gate charge (Typ. 9nC) under conditions of VGS = 10V and ID = 2.25A. The FDPF8N50NZ is a 500V, 8A product featuring an RDS(ON) of 0.77Ω (Typ.) and a low gate charge (Typ. 14nC) under conditions of VGS = 10V and ID = 4A.