Announced at the U.S. 'Flash Memory Summit 2016', leading the ultra-high-capacity tera era
Continued leadership in the premium memory market with the launch of future V-NAND solution products

Samsung Electronics unveiled a next-generation V-NAND solution at the 'Flash Memory Summit 2016' held at the Santa Clara Convention Center in the United States on the 10th, presenting new possibilities for flash memory.

At this Flash Memory Summit, Samsung Electronics unveiled a mid-to-long-term strategy to solidify its leadership in 3D memory technology based on 4th generation (64-layer) V-NAND technology and to lead the ultra-high-capacity 'tera' era in the era of big data.

Samsung Electronics' strategy is to maximize the efficiency of IT investments for corporate customers with high-capacity, high-performance, and ultra-compact solutions, in line with market demands such as the growth of big data, high-speed processing, and reduced data center management costs.

Accordingly, Samsung Electronics offers: △ 4th generation (64-layer) V-NAND with a 30% increase in stacking layers compared to the existing 3rd generation (48-layer) product △ high-capacity 32TB SAS SSD for servers △ for ultra-slim PCs
Introducing innovative new products based on 4th generation V-NAND, including a 1TB BGA NVMe SSD and a high-end Z-SSD.

4th Generation V-NAND with 30% Higher Stacking Layers and High-Capacity 32TB SAS SSD for Serversbr />
'4th Generation V-NAND' is a product incorporating Samsung Electronics' innovative technology that stacks 1.3 times more '3D cells' for data storage than the existing 48-layer model. The 4th Generation V-NAND is capable of achieving up to 512Gb, enabling high-capacity products to be manufactured in compact packages, and has improved I/O speeds to 800Mbps. Samsung Electronics plans to launch the world's first 4th Generation V-NAND-based solution products in the fourth quarter of this year.

Samsung Electronics plans to launch the world's largest capacity '32TB server SSD' next year, equipped with 4th generation V-NAND to double the capacity of the existing 16TB product. Replacing a system composed of existing HDDs (based on 2 racks) with a 32TB SAS SSD can reduce the system's physical space by approximately 1/40. Samsung Electronics intends to develop ultra-high-capacity SSDs of over 100TB by 2020 to lead the popularization of Tera SSDs and continue to dominate the data center and enterprise storage SSD markets.

1TB BGA NVMe SSD for Ultra-Slim PCs and Z-SSD for High-End

Samsung Electronics plans to launch a 1TB BGA NVMe SSD the size of a 1-cent coin next year by jointly developing FO-PLP high-density packaging technology with Samsung Electro-Mechanics. Its sequential read speed is 1,500MB/s, which is three times faster than existing SSDs, and it also reaches a write speed of 900MB/s by applying Turbo Write technology. This speed allows for the transfer of a high-resolution Full HD movie (5GB) in about 3 seconds and its storage in about 6 seconds. This product is expected to significantly contribute to improving the design flexibility of ultra-slim PCs, such as securing space for a large-capacity battery, by reducing the size of existing products by more than 50%.


Samsung Electronics has unveiled the "Z-SSD," which offers response times more than four times faster and sequential read speeds 1.6 times faster than NVMe SSDs. The Z-SSD is an ultra-high-performance, high-end SSD product scheduled for release next year, featuring optimized operating circuits such as V-NAND and controllers to further enhance storage performance. The Z-SSD is expected to provide an optimal solution for high-performance markets requiring real-time analysis, such as big data analytics and server caches.

"We are now able to maximize the Total Cost of Ownership (TCO) reduction effect for storage systems by providing customers with high-capacity, high-performance, and ultra-compact solutions based on 4th generation V-NAND," said Jeon Young-hyun, President of Samsung Electronics' Memory Business Division. "Going forward, we will continue to expand our storage business areas based on our unrivaled V-NAND technology."

Samsung Electronics pioneered the era of 3D memory semiconductors by mass-producing the world's first V-NAND (1st generation, 24 layers) in 2013, and has been providing customers with Samsung Electronics' unique differentiated V-NAND solutions by increasing the number of stacked layers every year.

Samsung Electronics plans to continue leading the premium memory market by launching differentiated V-NAND solution products and expanding technological cooperation with global customers.