Providing a cost-effective platform capable of increasing wireless system performance by enhancing advanced broadband amplifier technology

Korea, September 30, 2011 – STMicroelectronics ( www.st.com ), a world-leading integrated semiconductor company, has launched a new radio-frequency (RF) power transistor based on advanced technology that enhances the performance, robustness, and reliability of critical applications such as private mobile radio used in government communications and emergency services, as well as L-band satellite uplink equipment.

Equipment such as wireless base stations and repeaters used by commercial telecommunications companies, as well as security and emergency service agencies, must achieve high RF power output under high-frequency conditions while providing low distortion characteristics. These conflicting requirements can necessitate complex designs and additional costs. It has been verified that designers can successfully address these conditions through LDMOS technology, and ST is further advancing the technology to support equipment designers in significantly increasing system performance.

Serge Juhel, Manager of RF Product Marketing and Application Support at ST, stated, “LDMOS is a key technology for supporting robust high-speed wireless communication, and ST’s next-generation RF power transistors enable equipment designers to enhance RF power without compromising critical system metrics such as linearity, robustness, and reliability.” He added, “These newly launched advanced products provide benefits for critical applications such as personal wireless, government broadband communications, aviation systems, and satellite uplink wireless.”

The LET RF transistor family utilizes ST’s latest STH5P LDMOS technology to enhance power saturation performance, minimizing distortion even at higher power levels. These devices can operate at up to 2 GHz while significantly improving linearity, robustness, and reliability. Efficiency has also increased by 10–15% compared to devices using the initial LDMOS process.

In addition, it provides 3dB higher gain than the previous generation, simplifying amplifier design while minimizing the number of components. Additional performance enhancements include an increased breakdown voltage from 65V to 80V, improved temperature performance for increased reliability, and a significant increase in load mismatch performance.

Six devices in the LET product family are currently in mass production, and more than five devices are scheduled to be mass-produced in the fourth quarter of 2011.

Available in industry-standard bolt-down or eard packaging styles, prices range from $31 to $128.70 per unit based on a supply volume of 1,000. Separate pricing conditions are available for bulk orders.

Devices provided in cost-effective Power-SO 10RF surface mount plastic packages with formed or straight leads are currently undergoing certification.