Infineon Technologies (Korea Representative Matthias Ludwig) has launched a 30V power MOSFET (metal oxide semiconductor field effect transistor) that offers the industry's lowest RDS(on) for high-current automotive applications. The new OptiMOS™-T2 30V MOSFET is an N-channel device with an RDS(on) of only 0.9 mΩ at a drain current of 180 A and a gate-source voltage of 10 V. Available in a D2PAK-7 package, the IPB180N03S4L-H0 meets the needs of customers requiring power MOSFETs in standard packages by offering high nominal current and the industry's lowest RDS(on) at a low price.

Based on Infineon's powerful second-generation trench technology for power MOSFETs, the OptiMOS-T2 device is ideal for high-current automotive motor drive applications, electric power steering (EPS), and especially for start/stop functions.

In terms of cost and efficiency, the industry is moving toward trench technology. Power MOSFET trench technologies, such as OptiMOS-T2, significantly improve RDS(on) and gate charge compared to previous technologies. Consequently, they achieve the industry's lowest FoM (figure of merit, the product of gate charge and RDS(on)). Furthermore, Infineon's innovative high-current "Power-bond" technology addresses the limitations of wire bonds in MOSFETs, reducing the RDS(on) drop and increasing current capacity. This improves reliability by keeping the wire bonds cool. The latest Powerbond technology enables up to four double-stitch 500µm wire bonds in a single MOSFET, allowing for a 180A current rating in a standard package.

OptiMOS-T2 technology and a robust package are designed to withstand 260°C during reflow soldering with MSL1 (Moisture Level 1) and are RoHS compliant through lead-free plating. The IPB180N03S4L-H0 power MOSFET fully complies with the Automotive Electronics Council standard (AEC-Q101). Infineon's advanced trench technology achieves low gate charge, low capacitance, low switching losses, and excellent FoM, thereby achieving new peak levels in electric motor efficiency and minimizing EMC radiation. It also enables smaller driver output stages with optimized gate charge.

IPB180N03S4L-H0 is a high-current Apple that requires multiple MOSFETs to operate in parallel