Amorphous graphene in which carbon atoms are connected on a two-dimensional plane
Developed jointly with Sungkyunkwan University, published in Science Advances

Professor Hwang Dong-mok and Dr. Lee Jae-hyun of the Department of Materials Science and Engineering at Sungkyunkwan University's College of Engineering, along with Executive Vice President Hwang Sung-woo and Dr. Joo Won-je of Samsung Electronics' Advanced Institute of Technology, announced that they have jointly developed the world's first source technology for "large-area single-atom-layer amorphous graphene synthesis" on semiconductor wafers.

In 2014, a joint research team from Sungkyunkwan University and Samsung Electronics developed a source technology for synthesizing single-crystal graphene on a semiconductor substrate over a large area. Through this follow-up research, they succeeded in synthesizing amorphous graphene, in which carbon atoms are randomly connected on a two-dimensional plane, over a large area by controlling the interatomic defect structure within the two-dimensional material.


▲ Amorphous graphene

Professor Hwang Dong-mok predicted, “This achievement is significant in that it greatly expands the scope of 2D materials, which are emerging as core materials for next-generation industries, and it will be possible to pioneer new application fields based on the new characteristics of amorphous 2D materials, which are different from existing crystalline 2D materials.”

The paper on these research results is published in Science AdvanceIt was published on the online edition of ces) on the 10th.