Includes 900V MOSFETs with R _DS(ON) less than 100mΩ
Performance enhancements for server power supplies, EV chargers, solar power generators, and more

STMicroelectronics (ST) has introduced its new 900V MDmesh™ K5 Super-Junction MOSFETs. Offering best-in-class on-resistance (RDS(ON)) and dynamic characteristics, these devices are ideal for power-supply designs that demand high power and efficiency.

ST says the new series includes the first 900V MOSFETs with an RDS(ON) of less than 100mΩ, offering the highest RDS(ON) among DPAK devices. It also offers exceptional flexibility in systems requiring a wide input voltage range, with faster switching due to the lowest gate charge (Qg).



These characteristics ensure high efficiency and reliability in all types of flyback converters, including standard, quasi-resonant, and active-clamp designs, with power ratings from as low as 35 W to as high as 230 W and beyond. Additionally, low input and output capacitances (Ciss, Coss) minimize energy losses in the half-bridge LLC resonant converter, thereby enabling zero-voltage switching.

The new devices' improved safety margins and superior static and dynamic behavior can enhance the performance of a wide range of products, including server power supplies, three-phase switched-mode power supplies (SMPS), LED lighting power supplies, electric-vehicle (EV) chargers, solar power generators, welders, industrial drives, and factory automation.

ST's MDmesh K5 super-junction transistor family offers a wide range of voltage ratings: 800V, 850V, 900V, 950V, 1050V, 1200V, and 1500V. It also offers D2PAK and DPAK surface-mount power packages, along with a variety of package options including TO-220AB, TO-220FP, TO-247, TO-247 Long Lead, IPAK, and I2PAK, giving designers a comprehensive portfolio of Very High Voltage (VHV) MOSFETs.