ZVS-Based LLC Resonant Converter
VHV Leveraging the Advantages of Fast Recovery Diodes

STMicroelectronics (hereinafter ST) has introduced MDmesh™ DK5, a power MOSFET that is a VHV (Very High-Voltage) Super-junction MOSFET leveraging the advantages of fast recovery diodes. This device can be utilized by designers to maximize efficiency across various power conversion topologies, including ZVS (Zero-Voltage Switching) based LLC resonant converters.

This new product is a Super-junction MOSFET supporting rated voltages of 950V to 1050V, delivering excellent switching performance by implementing higher rated current per die and lower on-resistance (RDS(ON)) compared to conventional planar MOSFETs.


Therefore, in design applications powered by high bus voltages such as telecommunications and data center servers, as well as converters for high-power equipment including industrial welders, plasma generators, high-frequency induction heaters, and X-ray devices, the use of parallel components can be significantly reduced, thereby increasing power density and improving efficiency.

This new device features a fast recovery body diode enabling higher efficiency in ZVS LLC resonant converters, which is used for applications requiring high efficiency across a wide input voltage range. Boost DC/DC converters for battery charging as well as other types of bridge converters can benefit from the low loss and improved dynamic performance of this device. Compared to currently available VHV fast diode MOSFETs, ST's DK5 device combines the best reverse recovery time (trr) and lowest MOSFET gate charge (Qg) and RDS(ON), along with the excellent output and input capacitance (Coss, Ciss) of super-junction devices.

ST is expanding its VHV super-junction portfolio through the DK5 product family, adding six new components based on TO-247, TO-247 LL (Long-Lead), Max247, and ISOTOP power packages, including devices rated from 800V to 1500V.