Suitable for battery charging and energy storage systems

Infineon Technologies has released a 75A/1200V discrete IGBT with a maximum rated diode integrated in a TO-247PLUS package.

TO-247PLUS 3-pin and 4-pin packages are suitable for applications requiring high power density with a 1200V blocking voltage, such as drives, photovoltaics, and UPS (uninterruptible power supplies), as well as for battery charging and energy storage systems.

Compared to the standard TO-247-3 package, the new TO-247PLUS package can provide double the current rating. By eliminating screw holes, the PLUS package allows for the use of a larger lead frame area, enabling the mounting of larger IGBT chips.

We are now able to offer a 1200V IGBT with a maximum capacity of 75A that integrates a diode with the same footprint as existing products. The TO-247PLUS package has a wider lead frame, resulting in lower thermal resistance and thus improved heat dissipation capabilities.

For designers seeking to improve switching losses, the TO-247PLUS 4-pin package provides an additional Kelvin emitter source pin. Additionally, system power density can be increased by using 1200V IGBTs available in TO-247PLUS 3-pin and 4-pin packages. This allows for a reduction in the number of power devices used in parallel, as well as improvements in system efficiency or thermal conditions.