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Western Digital Develops Next-Generation 96-Layer Vertically Stacked 3D NAND Technology
Strengthening Storage Technology Leadership with the First Development of 'BiCS4'
Sampling will begin in the second half of 2017, and trial production will begin in mid-2018.
Western Digital announced the successful development of its next-generation 96-layer vertically stacked 3D NAND technology, 'BiCS4'.
Jointly developed with Western Digital's technology and manufacturing partner, Toshiba, BiCS4 will initially be produced as a 256Gb (gigabit) chip, with future shipments in various capacities, including a single 1Tb (terabit) chip. It will be available in 3-bit-per-cell (TLC) and 4-bit-per-cell (QLC) architectures, with OEM customer sampling scheduled for the second half of 2017, with trial production expected in mid-2018.

“The successful development of the industry’s first 96-layer 3D NAND technology further solidifies Western Digital’s leadership and technology roadmap in NAND flash,” said Siva Sivaram, senior vice president of memory technology at Western Digital. “With our 3D NAND portfolio that delivers the highest capacity, performance and reliability at a reasonable cost, we will address the needs of all NAND flash markets, spanning consumer, mobile, computing and data center.”
Meanwhile, Western Digital is accelerating its robust manufacturing operations, actively continuing production of NAND flash memory, including 3D NAND, at its joint venture manufacturing facility in Japan. This year, production of its 64-layer 3D NAND technology, "BiCS3," is expected to account for more than 75% of total 3D NAND supply. In particular, the joint venture manufacturing facility, including its partner Toshiba, is expected to record the highest production volume of 64-layer 3D NAND in the industry this year.
Sampling will begin in the second half of 2017, and trial production will begin in mid-2018.
Western Digital announced the successful development of its next-generation 96-layer vertically stacked 3D NAND technology, 'BiCS4'.
Jointly developed with Western Digital's technology and manufacturing partner, Toshiba, BiCS4 will initially be produced as a 256Gb (gigabit) chip, with future shipments in various capacities, including a single 1Tb (terabit) chip. It will be available in 3-bit-per-cell (TLC) and 4-bit-per-cell (QLC) architectures, with OEM customer sampling scheduled for the second half of 2017, with trial production expected in mid-2018.
“The successful development of the industry’s first 96-layer 3D NAND technology further solidifies Western Digital’s leadership and technology roadmap in NAND flash,” said Siva Sivaram, senior vice president of memory technology at Western Digital. “With our 3D NAND portfolio that delivers the highest capacity, performance and reliability at a reasonable cost, we will address the needs of all NAND flash markets, spanning consumer, mobile, computing and data center.”
Meanwhile, Western Digital is accelerating its robust manufacturing operations, actively continuing production of NAND flash memory, including 3D NAND, at its joint venture manufacturing facility in Japan. This year, production of its 64-layer 3D NAND technology, "BiCS3," is expected to account for more than 75% of total 3D NAND supply. In particular, the joint venture manufacturing facility, including its partner Toshiba, is expected to record the highest production volume of 64-layer 3D NAND in the industry this year.
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