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Samsung Electronics Unveils Largest Capacity V-NAND SSD Solution at Flash Memory Summit

Google 우선 소스Published2017.08.09 10:42
16 layers of 1Tb NAND are stacked to create a 2TB single unit package.

Samsung Electronics unveiled the world's largest capacity V-NAND and next-generation SSD solutions at the 'Flash Memory Summit 2017' held at the Santa Clara Convention Center in the United States.

At this summit, Samsung Electronics unveiled innovative new V-NAND-based technologies, including the world's largest capacity '1Tb V-NAND', 'NGSFF (Next Generation Small Form Factor) SSD' capable of improving the density of server systems, 'Z-SSD' with significantly improved performance compared to existing SSDs, and 'Key Value SSD' with a new concept data storage method.

At the summit held on this day, Samsung Electronics unveiled "1Tb NAND," which doubles the capacity of the "3D cell" used for data storage from the existing 512Gb. By stacking 16 layers, the "1Tb NAND" can produce 2TB in a single package, enabling a revolutionary increase in SSD capacity. The company plans to officially launch the highest-capacity SSD products equipped with 1Tb V-NAND in 2018.

Samsung Electronics announced 'NGSFF SSD,' a new SSD standard capable of maximizing storage space utilization within server systems. Replacing a system configured with existing M.2 SSDs with an 'NGSFF SSD' can increase storage capacity by up to four times based on the same system space.

At the summit on this day, Samsung Electronics unveiled a 576TB reference system (1U) equipped with 36 16TB 'NGSFF SSDs', and a 1PB (petabyte) storage system can be implemented with a 2U system.

Samsung Electronics plans to meet customer demand by mass-producing 'NGSFF SSDs' starting in the fourth quarter, and complete JEDEC standardization in the first quarter of next year to enable data center and various server customers to build systems more efficiently.

The 'Z-SSD', also announced on this day, is a high-end SSD product that maximizes performance by configuring an optimized operating circuit. It has a read response speed of 15 µs, which is 7 times faster than existing NVMe SSDs, and can achieve a response speed improved by up to 12 times in system environments where reading and writing are repeated.
At the summit, Samsung Electronics also unveiled a new concept 'Key Value SSD' specialized for storing unstructured data.

While existing SSDs use a method of converting data of various types and sizes into a specific size for storage, applying 'Key Value SSD' technology allows various data to be stored as is without a separate conversion process, thereby increasing the system's data input/output speed and also extending the lifespan of the SSD.

Samsung Electronics Memory Business Division Head Jin Gyo-young stated, "Through the continuous development of V-NAND solutions, we will maximize customer value and proactively respond to future demand for advanced semiconductors such as AI and big data."
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