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Innovative H-PSOF Package for Automotive Power Semiconductors Announced

Google 우선 소스Published2012.02.06 09:19

– Establishing new standards for high current performance and high efficiency

January 31, 2012, Seoul – Infineon Technologies (Korea Representative Director Seung-soo Lee) announced an innovative packaging technology that provides high current capacity and efficiency for demanding electronic applications, including electric and hybrid vehicles. This new TO package complies with the JEDEC standard H-PSOF (Heatsink Plastic Small Outline Flat lead). The 40V OptiMOS™ T2 power transistor, the first product launched using H-PSOF package technology, offers a current capacity of up to 300A and an extremely low RDS(on) of just 0.76 mOhm (Ω).

By utilizing high-performance power semiconductor components, automotive system designers will be able to comply with government regulations requiring improved fuel efficiency and overall emissions reduction. To achieve these regulations, power MOSFETs with a current capacity of 200A or more and an RDS(on) of 1mOhm or less are required to lower conduction losses and improve overall efficiency. To date, no MOSFET products capable of meeting these requirements have been released in the automotive semiconductor market.

Infineon has set a new milestone by providing a 40V power MOSFET featuring a maximum current capacity of 300A and an RDS(on) of only 0.76mOhm through the H-PSOF package. Additionally, the H-PSOF package is smaller in overall dimensions and size compared to the standard D2PAK package (TO-263) commonly used. The H-PSOF package has a footprint that is 20 percent smaller and about half the height of the D2PAK package.

"By developing the innovative H-PSOF package, Infineon has once again demonstrated that it is a leading company driving technology in the automotive and power semiconductor markets, leveraging its expertise in automotive systems," said Jochen Hanebeck, President of Automotive at Infineon Technologies. "This innovative packaging technology for high-current MOSFETs will enable our automotive system customers to design energy-efficient and highly reliable automotive applications to meet the demands for improved fuel economy and reduced emissions."

By utilizing H-PSOF packages, automotive electronics manufacturers can supply products better suited to the high-current application market. These applications include battery management for hybrid vehicles, Electric Power Steering (EPS), active alternators, and other heavy-load applications designed to achieve higher efficiency and reduce emissions. According to a recent report by the U.S. market research firm Strategy Analytics, automotive EPS and start-stop systems are cited as increasingly expanding application sectors. These applications are projected to grow from 47 million units in 2011 to 110 million units in 2016, at a Compound Annual Growth Rate (CAGR) of approximately 19 percent.

The primary objective of developing the H-PSOF package is to provide high current performance by lowering package resistance and increasing package current capacity compared to D2PAK.

The H-PSOF package also offers assembly and manufacturing advantages. This package technology features a special design that enables excellent wetting, allowing for reliable soldering, and allows for lead control during soldering operations using automatic optical inspection (AOI) equipment, which is typically included as part of a surface mount technology (SMT) production line.

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The first product to be released using the H-PSOF package is the IPLU300N04S4-R7 from Infineon's 40V OptiMOS T2 automotive power transistor family, which sets a new standard for energy efficiency, CO2 reduction, and electric drive applications. The IPLU300N04S4-R7 has a continuous drain current (ID) of 300A and an RDS(on) of 0.76mOhm. The H-PSOF package power devices comply with the AEC-Q101 standard. Infineon plans to release additional 40V and 30V automotive MOSFET products utilizing H-PSOF package technology.

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