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Rohm launches FeRAM capturing high-speed operation and low power consumption across a wide range
Achieving industry-leading standby current of 10µA
Realizing sleep current of 0.1µA and sleep mode recovery timeIn recent electronic devices, there is a growing demand for large-scale data, low power consumption, mobile applications, and improved data security including emergency situations such as sudden power outages.
To respond to these market demands, Lapis Semiconductor has developed FeRAM that increases capacity, achieves compatibility between wide power supply voltage range and high-speed operation, and implements low power consumption including standby and sleep modes, with deployment expected in battery-driven mobile devices and portable terminals.
The MR45V100A, a 1Mbit ferroelectric memory, is an SPI BUS product capable of high-speed operation at 40MHz across a wide power supply voltage range of 1.8V to 3.6V. This enables stable high-speed operation even when sudden voltage drops occur in areas with unstable power environments at 1Mbit capacity, helping to reliably perform high-speed data backup of the mounted device.
The MR44V100A is an I2C BUS product optimized for applications where speed is not critical. Additionally, to suppress increased power consumption due to increased data volume in mobile devices, the standby mode has been improved and the sleep mode has been incorporated for the first time in Lapis FeRAM. The 1Mbit FeRAM realizes industry-leading standby current of 10µA (average) and sleep current of 0.1µA (average), enabling deployment in portable terminals and mobile devices such as payment terminals and data loggers where battery operation time is critical.
Product Features and Applications
Nonvolatile memory FeRAM features "high-speed data updates," "high-speed rewrite endurance," and "low power consumption" compared to nonvolatile memories such as EEPROM and flash memory.
Product Advantages
In standby mode, the power to circuits that do not need to operate is thoroughly cut off, and when returning to operation, only necessary portions are rapidly initialized to quickly process return operation. Accordingly, an industry-leading level standby current of 10μA on average has been achieved for a 1Mbit FeRAM.
For the first time in Lapis Semiconductor, a sleep mode has been incorporated that enables significantly lower power consumption than the conventional standby mode. Accordingly, the power consumption in sleep mode has been achieved at an industry-leading level of 0.1μA on average. Additionally, by achieving the industry-fastest recovery time from sleep mode of 100μs, the sleep mode can be applied even in applications where the idle time is short or sudden operation resumption is necessary.

Product Detailed Specifications
Lapis Semiconductor has developed FeRAM with various capacities and interfaces since 2011 by combining Rohm's ferroelectric memory manufacturing technology with Lapis' memory development technology. It has been adopted in multifunction printers, automotive accessories, FA (Factory Automation) equipment and other applications requiring nonvolatile, high-speed and high-frequency data updates.


Product Advantages
In standby mode, the power to circuits that do not need to operate is thoroughly cut off, and when returning to operation, only necessary portions are rapidly initialized to quickly process return operation. Accordingly, an industry-leading level standby current of 10μA on average has been achieved for a 1Mbit FeRAM.
For the first time in Lapis Semiconductor, a sleep mode has been incorporated that enables significantly lower power consumption than the conventional standby mode. Accordingly, the power consumption in sleep mode has been achieved at an industry-leading level of 0.1μA on average. Additionally, by achieving the industry-fastest recovery time from sleep mode of 100μs, the sleep mode can be applied even in applications where the idle time is short or sudden operation resumption is necessary.

Product Detailed Specifications

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