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Samsung Electronics begins mass production of 10nm 2nd generation SoC products
S3 Line Located at Mars Campus, Process Ready for Mass Production
Samsung Electronics announced that it will begin mass production of SoC (System on Chip) products based on the 10nm 2nd generation FinFET process (10LPP, Low Power Plus).
This 10nm 2nd generation process has improved performance and power efficiency by 10% and 15%, respectively, compared to the existing 1st generation process (10LPE, Low Power Early). In addition, since the 10LPP process is based on the 1st generation process that has already been verified through mass production, the time from product development to mass production (TAT, turn-around time) is significantly reduced, and it has the advantage of making it easy to secure initial yields.

Products using Samsung Electronics' 10LPP process are expected to be applied to a wider range of customers and applications, starting with new IT products to be released early next year.
“The 10LPP process not only provides customers with improved performance, but also enables customers to launch new products in a timely manner through high initial yields,” said Sang-Hyun Lee, senior vice president of Samsung Electronics’ foundry marketing team. “Samsung Electronics’ long-term 10nm utilization strategy will continue by expanding the 10nm-based process to the 8LPP process to provide differentiated competitiveness in various applications in the future.”
Samsung Electronics announced that it has completed preparations for mass production of the S3 line foundry process located at the Hwaseong Campus along with mass production of the 10nm second-generation process. The S3 line is the third foundry fab, following the S1 line in Giheung Campus and the S2 line in Austin, Texas, where not only the 10nm process but also Samsung's 7nm FinFET process using EUV technology will be mass-produced.
Samsung Electronics announced that it will begin mass production of SoC (System on Chip) products based on the 10nm 2nd generation FinFET process (10LPP, Low Power Plus).
This 10nm 2nd generation process has improved performance and power efficiency by 10% and 15%, respectively, compared to the existing 1st generation process (10LPE, Low Power Early). In addition, since the 10LPP process is based on the 1st generation process that has already been verified through mass production, the time from product development to mass production (TAT, turn-around time) is significantly reduced, and it has the advantage of making it easy to secure initial yields.
Products using Samsung Electronics' 10LPP process are expected to be applied to a wider range of customers and applications, starting with new IT products to be released early next year.
“The 10LPP process not only provides customers with improved performance, but also enables customers to launch new products in a timely manner through high initial yields,” said Sang-Hyun Lee, senior vice president of Samsung Electronics’ foundry marketing team. “Samsung Electronics’ long-term 10nm utilization strategy will continue by expanding the 10nm-based process to the 8LPP process to provide differentiated competitiveness in various applications in the future.”
Samsung Electronics announced that it has completed preparations for mass production of the S3 line foundry process located at the Hwaseong Campus along with mass production of the 10nm second-generation process. The S3 line is the third foundry fab, following the S1 line in Giheung Campus and the S2 line in Austin, Texas, where not only the 10nm process but also Samsung's 7nm FinFET process using EUV technology will be mass-produced.
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